component
FQD4N20-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FQD4N20-VB
VBsemi Elec · MOSFETs · TO-252
FQD4N20-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is rated ±20 V (VGS), and RDS(on) of 0.85 Ω is specified at VGS = 10 V. |
| 2 | D | passive | Drain-source voltage is rated 200 V (VDS), with continuous drain current of 5.0 A at TC = 25 °C (ID) and 4.0 A at TC = 100 °C. |
| 3 | S | passive | Source is the reference for VGS and the body diode, with continuous source-drain diode current IS of 4.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear Derating Factor | 0.33 | W/°C | 1 | ||||
| Linear Derating Factor (PCB Mount) | 0.02 | W/°C | Note e: 1 inch square PCB (FR-4 or G-10 material) | 1 | |||
| Single Pulse Avalanche Energy | EAS | 161 | mJ | Note b: VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 4.8 A | 1 | ||
| Repetitive Avalanche Current | IAR | 4.8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.2 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 42 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 2.5 | W | TA = 25 °C, note e: 1 inch square PCB (FR-4 or G-10 material) | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5 | V/ns | See note c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 260 | °C | for 10 s, 1.6 mm from case (note d) | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 110 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | 50 | °C/W | PCB mount, note a: 1 inch square PCB (FR-4 or G-10 material) | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 3 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.85 | Ω | VGS = 10 V, ID = 2.9 A | 2 | ||
| Forward Transconductance | gfs | 1.7 | S | VDS = 50 V, ID = 2.9 A | 2 | ||
| Total Gate Charge | Qg | 13 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 4.8 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 19 | A | Note a | 2 | ||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 4.8 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 300 | ns | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 1.8 | μC | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
FQD4N20-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fqd4n20-vb-etched.step/fqd4n20-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd4n20-vb.step/fqd4n20-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
32e4ca8eb53d892c, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQD4N20-VB
**VBsemi Elec** · MOSFETs · TO-252
FQD4N20-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is rated ±20 V (VGS), and RDS(on) of 0.85 Ω is specified at VGS = 10 V. |
| 2 | D | passive | Drain-source voltage is rated 200 V (VDS), with continuous drain current of 5.0 A at TC = 25 °C (ID) and 4.0 A at TC = 100 °C. |
| 3 | S | passive | Source is the reference for VGS and the body diode, with continuous source-drain diode current IS of 4.8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 5 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 4 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Linear Derating Factor | | | | 0.33 | W/°C | | 1 |
| Linear Derating Factor (PCB Mount) | | | | 0.02 | W/°C | Note e: 1 inch square PCB (FR-4 or G-10 material) | 1 |
| Single Pulse Avalanche Energy | EAS | | | 161 | mJ | Note b: VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25, IAS = 4.8 A | 1 |
| Repetitive Avalanche Current | IAR | | | 4.8 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 4.2 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 42 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation (PCB mount) | PD | | | 2.5 | W | TA = 25 °C, note e: 1 inch square PCB (FR-4 or G-10 material) | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 5 | V/ns | See note c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak temperature) | | | | 260 | °C | for 10 s, 1.6 mm from case (note d) | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 110 | °C/W | | 2 |
| Maximum Junction-to-Ambient (PCB mount) | RthJA | | | 50 | °C/W | PCB mount, note a: 1 inch square PCB (FR-4 or G-10 material) | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 3 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 200 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | μA | VDS = 160 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.85 | | Ω | VGS = 10 V, ID = 2.9 A | 2 |
| Forward Transconductance | gfs | 1.7 | | | S | VDS = 50 V, ID = 2.9 A | 2 |
| Total Gate Charge | Qg | | | 13 | nC | VGS = 10 V, ID = 4.8 A, VDS = 160 V | 2 |
| Continuous Source-Drain Diode Current | IS | | | 4.8 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Diode Forward Current | ISM | | | 19 | A | Note a | 2 |
| Body Diode Voltage | VSD | | | 1.8 | V | TJ = 25 °C, IS = 4.8 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | | 300 | ns | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | | 1.8 | μC | TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `FQD4N20-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd4n20-vb-etched.step` / `fqd4n20-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd4n20-vb.step` / `fqd4n20-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/fqd4n20-vb-datasheet.pdf) (10 pp, sha256 `32e4ca8eb53d892c`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqd4n20-vb-datasheet.pdf)