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FQD3P50TM

Public Made by Adom

by adom

onsemi MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
viewers fqd3p50tm: viewers · Ray 29d ago
fqd3p50tm-etched.glb fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd3p50tm-etched.step fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd3p50tm-hero.glb fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd3p50tm-hero.overlay.json fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd3p50tm.glb Publish 0.1.0 · Ray 29d ago
fqd3p50tm.kicad_mod Publish 0.1.0 · Ray 29d ago
fqd3p50tm.kicad_sym Publish 0.1.0 · Ray 29d ago
fqd3p50tm.lbr Publish 0.1.0 · Ray 29d ago
fqd3p50tm.step Publish 0.1.0 · Ray 29d ago
package.json fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
page.json fqd3p50tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
README.md fqd3p50tm: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 23d ago

FQD3P50TM

onsemi · MOSFETs · TO-252-2

FQD3P50TM from onsemi, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel enhancement MOSFET, with VGSS rated ±30 V and threshold VGS(th) of -3.0 to -5.0 V.
2 D passive Drain, connected to the mounting tab; VDSS -500 V and continuous ID -2.1 A at TC = 25°C.
3 S passive Source; body-diode continuous forward current is limited to -2.1 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -500 V 1
Drain Current - Continuous ID -2.1 A TC = 25°C 1
Drain Current - Continuous ID -1.33 A TC = 100°C 1
Drain Current - Pulsed IDM -8.4 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 250 mJ Note 2 1
Avalanche Current IAR -2.1 A Note 1 1
Repetitive Avalanche Energy EAR 5 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt -4.5 V/ns Note 3 1
Power Dissipation (TA = 25°C) PD 2.5 W TA = 25°C, mounted on minimum pad size recommended (PCB Mount) 1
Power Dissipation (TC = 25°C) PD 50 W TC = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 50 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 1
Thermal Resistance, Junction-to-Ambient RθJA 110 °C/W 1
Drain-Source Breakdown Voltage BVDSS -500 V VGS = 0 V, ID = -250 µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -400 V, TC = 125°C 2
Gate-Body Leakage Current, Forward IGSSF -100 nA VGS = -30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR 100 nA VGS = 30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) -3 -5 V VDS = VGS, ID = -250 µA 2
Static Drain-Source On-Resistance RDS(on) 3.9 4.9 Ω VGS = -10 V, ID = -1.05 A 2
Input Capacitance Ciss 510 660 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 70 90 pF 2
Reverse Transfer Capacitance Crss 9.5 12 pF 2
Turn-On Delay Time td(on) 12 35 ns VDD = -250 V, ID = -2.7 A, RG = 25 Ω 2
Turn-On Rise Time tr 56 120 ns 2
Turn-Off Delay Time td(off) 35 80 ns 2
Turn-Off Fall Time tf 45 100 ns 2
Total Gate Charge Qg 18 23 nC VDS = -400 V, ID = -2.7 A, VGS = -10 V 2
Maximum Continuous Drain-Source Diode Forward Current IS -2.1 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM -8.4 A 2
Drain-Source Diode Forward Voltage VSD -5 V VGS = 0 V, IS = -2.1 A 2

CAD (KiCad official)

  • Symbol: FQD3P50TM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: fqd3p50tm-etched.step / fqd3p50tm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd3p50tm.step / fqd3p50tm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 7bcd4adfe169de54, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF