component
FQD3P50TM
Public Made by Adomby adom
onsemi MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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fqd3p50tm: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ FQD3P50TM from onsemi, in a TO-252-2. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | -500 | | | V | | 1 |+| Drain Current - Continuous | ID | -2.1 | | | A | TC = 25°C | 1 |+| Drain Current - Continuous | ID | -1.33 | | | A | TC = 100°C | 1 |+| Drain Current - Pulsed | IDM | -8.4 | | | A | Note 1 | 1 |+| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |+| Single Pulsed Avalanche Energy | EAS | | | 250 | mJ | Note 2 | 1 |+| Avalanche Current | IAR | -2.1 | | | A | Note 1 | 1 |+| Repetitive Avalanche Energy | EAR | | | 5 | mJ | Note 1 | 1 |+| Peak Diode Recovery dv/dt | dv/dt | -4.5 | | | V/ns | Note 3 | 1 |+| Power Dissipation (TA = 25°C) | PD | | | 2.5 | W | TA = 25°C, mounted on minimum pad size recommended (PCB Mount) | 1 |+| Power Dissipation (TC = 25°C) | PD | | | 50 | W | TC = 25°C | 1 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Lead Temperature for Soldering | TL | | | 300 | °C | 1/8" from case for 5 seconds | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | | 2.5 | °C/W | | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 50 | °C/W | * When mounted on the minimum pad size recommended (PCB Mount) | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 110 | °C/W | | 1 |+| Drain-Source Breakdown Voltage | BVDSS | -500 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -500 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = -400 V, TC = 125°C | 2 |+| Gate-Body Leakage Current, Forward | IGSSF | | | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |+| Gate-Body Leakage Current, Reverse | IGSSR | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | -3 | | -5 | V | VDS = VGS, ID = -250 µA | 2 |+| Static Drain-Source On-Resistance | RDS(on) | | 3.9 | 4.9 | Ω | VGS = -10 V, ID = -1.05 A | 2 |+| Input Capacitance | Ciss | | 510 | 660 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Output Capacitance | Coss | | 70 | 90 | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 9.5 | 12 | pF | | 2 |+| Turn-On Delay Time | td(on) | | 12 | 35 | ns | VDD = -250 V, ID = -2.7 A, RG = 25 Ω | 2 |+| Turn-On Rise Time | tr | | 56 | 120 | ns | | 2 |+| Turn-Off Delay Time | td(off) | | 35 | 80 | ns | | 2 |+| Turn-Off Fall Time | tf | | 45 | 100 | ns | | 2 |+| Total Gate Charge | Qg | | 18 | 23 | nC | VDS = -400 V, ID = -2.7 A, VGS = -10 V | 2 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | -2.1 | A | | 2 |+| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | -8.4 | A | | 2 |+| Drain-Source Diode Forward Voltage | VSD | | | -5 | V | VGS = 0 V, IS = -2.1 A | 2 |+ ## CAD (KiCad official) - Symbol: `FQD3P50TM`
page.json+416−1@@ -151,6 +151,421 @@ "Package": "TO-252-2", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "7bcd4adfe169de54",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -500,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1.33,+ "typ": null,+ "max": null,+ "conditions": "TC = 100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -8.4,+ "typ": null,+ "max": null,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "Note 2",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": -4.5,+ "typ": null,+ "max": null,+ "conditions": "Note 3",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (TA = 25°C)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25°C, mounted on minimum pad size recommended (PCB Mount)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (TC = 25°C)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Lead Temperature for Soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1/8\" from case for 5 seconds",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "* When mounted on the minimum pad size recommended (PCB Mount)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -500,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -500 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = -400 V, TC = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -30 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 30 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -3,+ "typ": null,+ "max": -5,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3.9,+ "max": 4.9,+ "conditions": "VGS = -10 V, ID = -1.05 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 510,+ "max": 660,+ "conditions": "VDS = -25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 70,+ "max": 90,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9.5,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 35,+ "conditions": "VDD = -250 V, ID = -2.7 A, RG = 25 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 56,+ "max": 120,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": 80,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 45,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 18,+ "max": 23,+ "conditions": "VDS = -400 V, ID = -2.7 A, VGS = -10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain-Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -8.4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VGS = 0 V, IS = -2.1 A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +607,4 @@ "visibility": { "public": true }-}+}