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Contents

README

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FQD2N65SE

KTP · MOSFETs · TO-252

FQD2N65SE from KTP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the 650V N-channel MOSFET, with gate-source voltage rated at ±30 V (VGSS absolute maximum).
2 Drain passive Drain terminal, rated for 650 V drain-source voltage (VDSS) and 2 A drain current at TC=25℃ (1.5 A at TC=100℃).
3 Source passive Source terminal, the reference for the gate-source rating (±30 V) and the diode forward current rating (IS max 2 A).

Key specifications

Parameter Value
Manufacturer KTP
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current ID 2 A TC=25℃ 1
Drain Current ID 1.5 A TC=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 120 mJ note1 1
Avalanche Current IAR 2 A note2 1
Power Dissipation PD 40 W Ta=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.87 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=520V, TC=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 4.5 4.8 Ω ID=1A, VGS=10V 2
Input Capacitance Ciss 270 350 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 40 50 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 5 7 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 10 30 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 25 60 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 20 50 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 25 60 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 90 110 nC VDS=520V, VGS=10V, ID=2A (Note 3,4) 2
Max. Diode Forward Current Is 2 A 2
Max. Pulsed Forward Current ISM 8 A 2
Diode Forward Voltage VSD 1.5 V ID=2A 2

CAD (KiCad official)

  • Symbol: FQD2N65SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fqd2n65se-etched.step / fqd2n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd2n65se.step / fqd2n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (7 pp, sha256 081117ddfeaa7852, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF