# FQD17P06TM

**UMW** · MOSFETs · TO-252

FQD17P06TM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the -60V P-channel MOSFET; the gate-source voltage rating is VGSS = ±25 V. |
| 2 | D | passive | DRAIN terminal; continuous drain current is rated at -12 A at TC=25°C (-7.6 A at TC=100°C) with VDSS = -60 V. |
| 3 | S | passive | SOURCE terminal; reference for the gate-source voltage (VGSS ±25 V) and the drain-source ratings (VDSS -60 V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | -60 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | -12 | A | TC=25°C | 1 |
| Drain Current - Continuous | ID |  |  | -7.6 | A | TC=100°C | 1 |
| Drain Current - Pulsed | IDM |  |  | -48 | A |  | 1 |
| Gate-Source Voltage | VGSS | -25 |  | 25 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 300 | mJ |  | 1 |
| Avalanche Current | IAR |  |  | -12 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 4.4 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | -7 | V/ns |  | 1 |
| Power Dissipation (TA=25°C) | PD |  |  | 2.5 | W | TA=25°C, mounted on minimum recommended pad (PCB mount) | 2 |
| Power Dissipation (TC=25°C) | PD |  |  | 44 | W | TC=25°C | 2 |
| Power Dissipation Derate above 25°C |  |  |  | 0.35 | W/°C | above 25°C | 2 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum lead temperature for soldering purposes | TL |  |  | 300 | °C | 1/8 in from case, 5 s | 2 |
| Thermal Resistance, Junction to Case, Max | RθJC |  |  | 2.85 | °C/W |  | 2 |
| Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max | RθJA |  |  | 110 | °C/W | Minimum pad of 2-oz copper | 2 |
| Thermal Resistance, Junction to Ambient (1 in² Pad of 2-oz Copper), Max | RθJA |  |  | 50 | °C/W | 1 in² pad of 2-oz copper | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-60V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VGS=-48V, TC=125°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | -100 | nA | VGS=-25V, VDS=0V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | 100 | nA | VGS=25V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -2 |  | -3 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 110 | 135 | mΩ | VGS=-10V, ID=-6A | 3 |
| Input Capacitance | Ciss |  | 690 | 900 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss |  | 325 | 420 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 80 | 105 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) |  | 13 | 35 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 |
| Turn-On Rise Time | tr |  | 100 | 210 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 22 | 55 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 |
| Turn-Off Fall Time | tf |  | 60 | 130 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 |
| Total Gate Charge | Qg |  | 21 | 27 | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -12 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | -48 | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  |  | -4 | V | VGS=0V, IS=-12A | 4 |
| Gate to Source Charge | Qgs |  | 4.2 |  | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 |
| Gate to Drain Charge | Qgd |  | 10 |  | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | -0.06 |  | V/°C | Referenced to 25°C, ID=-250µA | 3 |
| Forward Transconductance | gFS |  | 8.7 |  | S | VDS=-30V, ID=-6A | 3 |
| Reverse Recovery Time | trr |  | 92 |  | ns | dIF/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  | 0.32 |  | µC | dIF/dt=100A/µs | 4 |

## CAD (KiCad official)

- Symbol: `FQD17P06TM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd17p06tm-etched.step` / `fqd17p06tm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd17p06tm.step` / `fqd17p06tm.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879651010842624) (11 pp, sha256 `6ed97629529c98f6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fqd17p06tm-datasheet.pdf)