FQB33N10LTM

{
  "schema_version": 1,
  "type": "component",
  "slug": "fqb33n10ltm",
  "title": "FQB33N10LTM",
  "brief": "onsemi MOSFETs, D2PAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "fqb33n10ltm"
  ],
  "component": {
    "mpn": "FQB33N10LTM",
    "manufacturer": "onsemi",
    "package": "D2PAK",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950245576859648",
    "parts": {
      "symbol": "fqb33n10ltm.kicad_sym",
      "footprint": "fqb33n10ltm.kicad_mod",
      "model_3d": "fqb33n10ltm-etched.glb",
      "model_3d_plain": "fqb33n10ltm.glb",
      "model_3d_step": "fqb33n10ltm-etched.step",
      "model_3d_step_plain": "fqb33n10ltm.step",
      "lbr": "fqb33n10ltm.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = ±20 V. Total gate charge Qg ≈ 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 °C (23 A @ TC = 100 °C); pulsed IDM = 132 A. Static RDS(on) = 52 mΩ max @ VGS = 10 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD ≤ 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr ≈ 90 ns typ."
      },
      {
        "number": "4",
        "name": "D (TAB)",
        "type": "passive",
        "description": "Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. RθJC = 1.18 °C/W max; solder to a copper pad (≥1 in² of 2 oz copper ≈ RθJA = 40 °C/W) for full 127 W dissipation."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950245576859648",
        "pages": 10,
        "sha256": "12557c1b513bfde1",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "file": "fqb33n10ltm.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          15.0,
          10.0,
          4.42
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "804a3f76e4182a02567b2429bdc9a585b857158fb8543fccd29c8eb6780e1310",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "fqb33n10ltm-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          15.0,
          10.0,
          4.42
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "0694fba1c14a634b884726e1e6cb9ae6db5e844c2da411257baf01db5687ff30",
        "checked": "2026-10-16",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "D2PAK",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    }
  },
  "variants": [
    {
      "mpn": "FQB33N10LTM",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "fqb33n10ltm"
  ],
  "discovery_pitch": "FQB33N10LTM (onsemi) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "fqb33n10ltm.kicad_sym",
    "fqb33n10ltm.kicad_mod",
    "fqb33n10ltm.glb",
    "fqb33n10ltm.step",
    "fqb33n10ltm.lbr",
    "docs/hero.png",
    "docs/fqb33n10ltm-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T20:46:28.016Z"
}