component
FQB33N10LTM
Public Made by Adomby adom
onsemi MOSFETs, D2PAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
FQB33N10LTM
onsemi · MOSFETs · D2PAK
FQB33N10LTM from onsemi, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = ±20 V. Total gate charge Qg ≈ 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A. |
| 2 | D | passive | Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 °C (23 A @ TC = 100 °C); pulsed IDM = 132 A. Static RDS(on) = 52 mΩ max @ VGS = 10 V. |
| 3 | S | passive | Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD ≤ 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr ≈ 90 ns typ. |
| 4 | D (TAB) | passive | Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. RθJC = 1.18 °C/W max; solder to a copper pad (≥1 in² of 2 oz copper ≈ RθJA = 40 °C/W) for full 127 W dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
FQB33N10LTM
CAD (KiCad official)
- Symbol:
FQB33N10LTM - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
fqb33n10ltm-etched.step/fqb33n10ltm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqb33n10ltm.step/fqb33n10ltm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
12557c1b513bfde1, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQB33N10LTM
**onsemi** · MOSFETs · D2PAK
FQB33N10LTM from onsemi, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = ±20 V. Total gate charge Qg ≈ 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A. |
| 2 | D | passive | Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 °C (23 A @ TC = 100 °C); pulsed IDM = 132 A. Static RDS(on) = 52 mΩ max @ VGS = 10 V. |
| 3 | S | passive | Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD ≤ 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr ≈ 90 ns typ. |
| 4 | D (TAB) | passive | Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. RθJC = 1.18 °C/W max; solder to a copper pad (≥1 in² of 2 oz copper ≈ RθJA = 40 °C/W) for full 127 W dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 4 |
## Ordering variants
Same part, different packaging or reel option.
- `FQB33N10LTM`
## CAD (KiCad official)
- Symbol: `FQB33N10LTM`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files: `fqb33n10ltm-etched.step` / `fqb33n10ltm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqb33n10ltm.step` / `fqb33n10ltm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950245576859648) (10 pp, sha256 `12557c1b513bfde1`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqb33n10ltm-datasheet.pdf)