component
FODM1008R2V
Public Made by Adomby adom
onsemi Transistor, Photovoltaic Output Optoisolators, SOP-4-2.54mm. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFODM1008R2V
onsemi · Transistor, Photovoltaic Output Optoisolators · SOP-4-2.54mm
FODM1008R2V from onsemi, in a SOP-4-2.54mm. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | LED anode of the GaAs infrared emitter; maximum continuous forward current IF(avg) is 50 mA and the LED power dissipation is 100 mW at 25°C. |
| 2 | CATHODE | passive | LED cathode of the GaAs infrared emitter; the reverse input voltage VR is rated at 6 V maximum. |
| 3 | EMITTER | passive | Phototransistor emitter; the emitter-collector voltage VECO is rated at 7 V. |
| 4 | COLLECTOR | passive | Phototransistor collector; the collector-emitter voltage VCEO is rated at 70 V and the continuous collector current IC at 50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOP-4-2.54mm |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Current Transfer Ratio (DC) | CTR | 130 | 260 | % | IF = 5 mA, VCE = 5 V | 4 | |
| Breakdown Voltage Collector to Emitter | BVCEO | 70 | V | IC = 1 mA, IF = 0 | 4 | ||
| Breakdown Voltage Emitter to Collector | BVECO | 7 | V | IE = 0.1 mA, IF = 0 | 4 | ||
| Steady State Isolation Voltage | VISO | 5000 | VACRMS | TA = 25°C, R.H. < 50%, t = 1.0 min., II-O ≤ 20 µA | 4 | ||
| Forward Voltage | VF | 1.4 | 1.6 | V | IF = 50 mA | 4 | |
| Reverse Current | IR | 10 | µA | VR = 4 V | 4 | ||
| Collector Dark Current | ICEO | 100 | nA | VCE = 70 V, IF = 0 | 4 | ||
| Saturation Voltage | VCE(SAT) | 0.3 | V | IF = 10 mA, IC = 1 mA | 4 | ||
| Rise Time (Non-Saturated) | tr | 5.7 | 18 | µs | IC = 2 mA, VCE = 5 V, RL = 100 | 4 | |
| Fall Time (Non-Saturated) | tf | 8.5 | 18 | µs | IC = 2 mA, VCE = 5 V, RL = 100 | 4 | |
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Operating Temperature | TOPR | -40 | 110 | °C | 3 | ||
| Junction Temperature | TJ | -40 | 125 | °C | 3 | ||
| Continuous Forward Current | IF(avg) | 50 | mA | 3 | |||
| Continuous Forward Current (pulse) | IF(pk) | 1 | A | 1 s Pulse, 300 pps | 3 | ||
| Reverse Input Voltage | VR | 6 | V | 3 | |||
| LED Power Dissipation | PDLED | 100 | mW | TA = 25°C (Note 2) | 3 | ||
| Continuous Collector Current | IC | 50 | mA | 3 | |||
| Collector-Emitter Voltage | VCEO | 70 | V | 3 | |||
| Emitter-Collector Voltage | VECO | 7 | V | 3 | |||
| Detector Power Dissipation | PDC | 150 | mW | TA = 25°C (Note 2) | 3 |
CAD (KiCad official)
- Symbol:
FODM1008R2V - Footprint:
Package_SO:SOP-4_3.8x4.1mm_P2.54mm - 3D model: SOP-4-2.54mm (KiCad packages3D, STEP)
- 3D model files:
fodm1008r2v-etched.step/fodm1008r2v-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fodm1008r2v.step/fodm1008r2v.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
2ac26a9e7eddc81a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).