component

FOD817B

Public Made by Adom

by adom

onsemi Transistor, Photovoltaic Output Optoisolators, PDIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FOD817B

onsemi · Transistor, Photovoltaic Output Optoisolators · PDIP-4

FOD817B from onsemi, in a PDIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive LED anode of the GaAs infrared emitting diode; the forward current is limited to 50 mA continuous (FOD817) and the emitter reverse voltage is 6 V.
2 Cathode passive LED cathode of the GaAs infrared emitting diode; the forward current is limited to 50 mA continuous (FOD817) and the reverse voltage rating is 6 V.
3 Emitter passive Phototransistor emitter; the emitter-collector breakdown rating is 6 V (VECO) and the device is specified for collector-emitter voltage up to 70 V.
4 Collector passive Phototransistor collector; VCEO is 70 V minimum and continuous collector current is 50 mA, with collector power dissipation of 150 mW.

Key specifications

Parameter Value
Manufacturer onsemi
Package PDIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Forward Current IF 50 mA FOD817 column 3
Reverse Voltage VR 6 V 3
Power Dissipation (emitter) PD 70 mW 3
Derate Above 100°C (emitter) 1.7 mW/°C Derate above 100°C 3
Collector-Emitter Voltage VCEO 70 V 3
Emitter-Collector Voltage VECO 6 V 3
Continuous Collector Current IC 50 mA 3
Collector Power Dissipation PC 150 mW 3
Derate Above 90°C (collector) 2.9 mW/°C Derate above 90°C 3
Storage Temperature TSTG -55 150 °C 2
Operating Temperature (FOD817) TOPR -55 110 °C FOD817 column 2
Junction Temperature TJ -55 125 °C 2
Lead Solder Temperature TSOL 260 °C for 10 s 2
Total Device Power Dissipation PTOT 200 mW 2
Forward Voltage VF 1.2 1.4 V IF = 20 mA 3
Reverse Current IR 10 A VR = 4.0 V 3
Terminal Capacitance Ct 30 250 pF V = 0, f = 1 kHz 3
Collector Dark Current ICEO 100 nA VCE = 20 V, IF = 0 3
Collector-Emitter Breakdown Voltage BVCEO 70 V IC = 0.1 mA, IF = 0 3
Emitter-Collector Breakdown Voltage BVECO 6 V IE = 10 A, IF = 0 3
Current Transfer Ratio (FOD817B) CTR 130 260 % IF = 5 mA, VCE = 5 V 3
Collector-Emitter Saturation Voltage VCE(SAT) 0.1 0.2 V IF = 20 mA, IC = 1 mA 3
Response Time (Rise) tr 4 18 s VCE = 2 V, IC = 2 mA, RL = 100 (Note 3) 4
Response Time (Fall) tf 3 18 s VCE = 2 V, IC = 2 mA, RL = 100 (Note 3) 4
Input-Output Isolation Voltage VISO 5000 VACRMS f = 60 Hz, t = 1 min, II-O ≤ 2 A 4
Isolation Capacitance CISO 0.6 1 pf VI-O = 0, f = 1 MHz 4
Junction-to-Case Thermal Resistance θJC 210 °C/W 2

CAD (KiCad official)

  • Symbol: FOD817B
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: PDIP-4 (KiCad packages3D, STEP)
  • 3D model files: fod817b-etched.step / fod817b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fod817b.step / fod817b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 85a5590e3d236403, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF