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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

FMMTA92TA

Diodes Incorporated · Bipolar (BJT) · SOT-23

FMMTA92TA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base of the PNP transistor; the datasheet gives IEBO max -100 nA at VEB = -3V and VEBO of -5V.
2	E	passive	Emitter of the PNP transistor; emitter-base voltage rating VEBO is -5V.
3	C	passive	Collector of the PNP transistor; VCEO of -300V, VCBO of -300V, and continuous IC of -200mA.

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Voltage	VCBO			-300	V		2
Collector-Emitter Voltage	VCEO			-300	V		2
Emitter-Base Voltage	VEBO			-5	V		2
Continuous Collector Current	IC			-200	mA		2
Power Dissipation	PD			0.31	W	Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air	2
Power Dissipation	PD			0.35	W	Note 6: 15mm x 15mm 1oz copper	2
Thermal Resistance, Junction to Ambient	RθJA		403		C/W	Note 5: minimum recommended pad layout, 1oz copper, single-sided 1.6mm FR-4, still air	2
Thermal Resistance, Junction to Ambient	RθJA		357		C/W	Note 6: 15mm x 15mm 1oz copper	2
Thermal Resistance, Junction to Lead	RθJL		350		C/W	Note 7: junction to solder-point (end of collector lead)	2
Operating and Storage Temperature Range	TJ, TSTG	-55		150	C		2
Electrostatic Discharge - Human Body Model	ESD HBM			4000	V	JEDEC Class 3A (Note 8)	2
Electrostatic Discharge - Machine Model	ESD MM			400	V	JEDEC Class C (Note 8)	2
Collector-Base Breakdown Voltage	BVCBO	-300			V	IC = -100µA	4
Collector-Emitter Breakdown Voltage	BVCEO	-300			V	IC = -1mA	4
Emitter-Base Breakdown Voltage	BVEBO	-5			V	IE = -100µA	4
Collector Cutoff Current	ICES			-250	nA	VCE = -200V	4
Emitter Cutoff Current	IEBO			-100	nA	VEB = -3V	4
Static Forward Current Transfer Ratio	hFE	25				IC = -1mA, VCE = -10V	4
Static Forward Current Transfer Ratio	hFE	40				IC = -10mA, VCE = -10V	4
Collector-Emitter Saturation Voltage	VCE(sat)			-0.5	V	IC = -20mA, IB = -2mA	4
Base-Emitter Saturation Voltage	VBE(sat)			-0.9	V	IC = -20mA, IB = -2mA	4
Output Capacitance	Cobo			6	pF	VCB = -20V, f = 1MHz	4
Transition Frequency	fT	50			MHz	VCE = -20V, IC = -10mA, f = 20MHz	4

CAD (KiCad official)

Symbol: FMMTA92TA
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: fmmta92ta-etched.step / fmmta92ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmta92ta.step / fmmta92ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (7 pp, sha256 31f111c994c2ef7a, retrieved 2026-10-10, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF