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FMMT619TA

Diodes Incorporated · Bipolar (BJT) · SOT-23

FMMT619TA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet pin-out drawing labels it B on the lower right lead, and Emitter-Base voltage is limited to 7 V (VEBO) with base current up to 500 mA.
2 E passive Emitter of the NPN transistor; the datasheet pin-out drawing labels it E on the upper right lead.
3 C passive Collector of the NPN transistor on the single lead; it is rated for VCEO 50 V, 2 A continuous and 6 A peak pulse current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 50 V TA=+25°C 2
Collector-Emitter Voltage VCEO 50 V TA=+25°C 2
Emitter-Base Voltage VEBO 7 V TA=+25°C 2
Continuous Collector Current IC 2 A TA=+25°C 2
Peak Pulse Current ICM 6 A TA=+25°C 2
Base Current IB 500 mA TA=+25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 625 mW Note 5: surface mounted on 25mm x 25mm FR4 PCB, single-sided 1oz copper, still air, steady state 2
Power Dissipation PD 806 mW Note 6: as Note 5, t ≤ 5 sec 2
Thermal Resistance, Junction to Ambient RθJA 200 °C/W Note 5: as Note 5 steady state 2
Thermal Resistance, Junction to Ambient RθJA 155 °C/W Note 6: as Note 5, t ≤ 5 sec 2
Thermal Resistance, Junction to Leads RθJL 194 °C/W Note 7: junction to solder point at end of collector lead 2
Collector-Base Breakdown Voltage BVCBO 50 190 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 50 65 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 4
Collector Cut-off Current ICBO 100 nA VCB = 40V 4
Emitter Cut-off Current IEBO 100 nA VEB = 6V 4
Collector Emitter Cut-off Current ICES 100 nA VCES = 40V 4
Static Forward Current Transfer Ratio hFE 200 IC = 10mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 300 IC = 200mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 100 IC = 2A, VCE = 2V 4
Collector-Emitter Saturation Voltage VCE(sat) 10 20 mV IC = 0.1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 125 200 mV IC = 1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 150 220 mV IC = 2A, IB = 50mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.87 1 V IC = 2A, IB = 50mA 4
Base-Emitter Turn-On Voltage VBE(on) 0.82 1 V IC = 2A, VCE = 2V 4
Transition Frequency fT 100 165 MHz IC = 50mA, VCE = 10V, f = 100MHz 4
Collector Output Capacitance Cobo 12 20 pF VCB = 10V, f = 1MHz 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: FMMT619TA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt619ta-etched.step / fmmt619ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt619ta.step / fmmt619ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 e9dd19ead0f9b965, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF