component

FMMT619TA-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FMMT619TA-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

FMMT619TA-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; NPN transistor control terminal, Emitter-Base voltage limited to 5 V maximum (VEBO).
2 E passive Emitter; main current terminal of the NPN transistor, carries the up to 2 A continuous collector current.
3 C passive Collector; main current terminal, rated 50 V (VCBO and VCEO) and 2 A continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V IC=100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 50 V IC=10mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA ,IC=0 2
Collector cut-off current ICBO 100 nA VCB=40V,IE=0 2
Emitter cut-off current IEBO 100 nA VEB=4V,IC=0 2
DC current gain hFE(1) hFE(1) 200 VCE=2V, IC=10mA 2
DC current gain hFE(2) hFE(2) 300 VCE=2V, IC=0.2A 2
DC current gain hFE(3) hFE(3) 200 VCE=2V, IC=1A 2
DC current gain hFE(4) hFE(4) 100 VCE=2V, IC=2A 2
DC current gain hFE(5) hFE(5) 40 VCE=2V, IC=6A 2
Collector-emitter saturation voltage VCE(sat)1 VCE(sat)1 20 mV IC=0.1A,IB=10mA 2
Collector-emitter saturation voltage VCE(sat)2 VCE(sat)2 200 mV IC=1A,IB=10mA 2
Collector-emitter saturation voltage VCE(sat)3 VCE(sat)3 220 mV IC=2A,IB=100mA 2
Base-emitter saturation voltage VBE(sat) 1 V IC=2A,IB=50mA 2
Base-emitter on voltage VBE(on) 1 V IC=2A, VCE=2V 2
Output capacitance Cob 20 pF VCB=10V, f=1MHz 2
Turn-on time t(on) 170 ns 2
Turn-off time t(off) 750 ns VCC=10V, IC=1A, IB1=-IB2=10mA 2
Transition frequency fT 100 MHz VCE=10V,IC=50mA, f=100MHz 2
Collector-base voltage VCBO 50 V 1
Collector-emitter voltage VCEO 50 V 1
Emitter-base voltage VEBO 5 V 1
Collector current -continuous IC 2 A 1
Power dissipation PC 0.35 W 1
Maximum power dissipation PCM 0.625 W 1
Operation junction and storage temperature range TJ,Tstg -55 150 °C 1
Thermal resistance from junction to ambient RθJA 357 °C/W 1
Thermal resistance from junction to ambient RθJA 200 °C/W note 1: ceramic substrate 15x15x0.6mm 1

CAD (KiCad official)

  • Symbol: FMMT619TA-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt619ta-hxy-etched.step / fmmt619ta-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt619ta-hxy.step / fmmt619ta-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 1d8b38e05de5ddc8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF