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FMMT618QTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FMMT618QTA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

FMMT618QTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; base current is limited to 500 mA and emitter-base voltage to 7 V.
2 E passive Emitter of the NPN transistor; VEBO rating is 7 V.
3 C passive Collector of the NPN transistor; VCEO 20 V, VCBO 20 V, 2.5 A continuous and 6 A peak pulse current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 20 V TA = +25°C 2
Collector-Emitter Voltage VCEO 20 V TA = +25°C 2
Emitter-Base Voltage VEBO 7 V TA = +25°C 2
Continuous Collector Current IC 2.5 A TA = +25°C 2
Peak Pulse Current ICM 6 A TA = +25°C 2
Base Current IB 500 mA TA = +25°C 2
Power Dissipation PD 625 mW Note 6 2
Power Dissipation PD 806 mW Note 7, t ≤ 5 sec 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 200 °C/W Note 6 2
Thermal Resistance, Junction to Ambient RθJA 155 °C/W Note 7, t ≤ 5 sec 2
Thermal Resistance, Junction to Leads RθJL 194 °C/W Note 8 2
Collector-Base Breakdown Voltage BVCBO 20 100 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 20 27 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 4
Collector Cut-off Current ICBO 100 nA VCB =20V 4
Emitter Cut-off Current IEBO 100 nA VEB = 4V 4
Collector Emitter Cut-off Current ICES 100 nA VCES =20V 4
Static Forward Current Transfer Ratio hFE 200 400 IC = 10mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 300 450 IC = 200mA, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 200 340 IC = 2A, VCE = 2V 4
Static Forward Current Transfer Ratio hFE 100 150 IC = 6A, VCE = 2V 4
Collector-Emitter Saturation Voltage VCE(sat) 8 15 mV IC =0.1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 70 150 mV IC =1A, IB = 10mA 4
Collector-Emitter Saturation Voltage VCE(sat) 130 200 mV IC =2.5A, IB = 50mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.89 1 V IC =2.5A, IB = 50mA 4
Base-Emitter Turn-On Voltage VBE(on) 0.83 1 V IC =2.5A, VCE = 2V 4
Transition Frequency fT 100 140 MHz IC = 50mA, VCE = 10V, f=100MHz 4
Collector Output Capacitance Cobo 23 30 pF VCB = 10V, f=1MHz 4
Turn-On Time t(on) 170 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA 4
Turn-Off Time t(off) 400 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA 4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: FMMT618QTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt618qta-etched.step / fmmt618qta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt618qta.step / fmmt618qta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 0b5fb773aa06468d, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF