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Contents

README

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FMMT591ATA

Diodes Incorporated · Bipolar (BJT) · SOT-23

FMMT591ATA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; Base-Emitter turn-on VBE(on) max -1.0V at IC = -1A, VCE = -5V, and VEBO is limited to -7V.
2 E passive Emitter of the PNP transistor; continuous collector current is limited to IC = -1A (peak ICM = -2A).
3 C passive Collector of the PNP transistor (single lead on one side of the package); VCEO = -40V, VCBO = -40V, with IC = -1A continuous.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -40 V IC = -100μA 4
Collector-Emitter Breakdown Voltage BVCEO -40 V IC = -10mA 4
Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100μA 4
Collector Cutoff Current ICBO -100 nA VCB = -30V 4
Collector-Emitter Cutoff Current ICES -100 nA VCES = -30V 4
Emitter Cutoff Current IEBO -100 nA VEB = -5.6V 4
Collector-Emitter Saturation Voltage VCE(sat) -200 mV IC = -100mA, IB = -1mA 4
Collector-Emitter Saturation Voltage VCE(sat) -350 mV IC = -500mA, IB = -20mA 4
Collector-Emitter Saturation Voltage VCE(sat) -500 mV IC = -1A, IB = -100mA 4
Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC = -1A, IB = -100mA 4
Base-Emitter Turn-On Voltage VBE(on) -1 V IC = -1A, VCE = -5V 4
Static Forward Current Transfer Ratio hFE 300 IC = -1mA, VCE = -5V 4
Static Forward Current Transfer Ratio hFE 250 IC = -500mA, VCE = -5V 4
Static Forward Current Transfer Ratio hFE 160 IC = -1A, VCE = -5V 4
Static Forward Current Transfer Ratio hFE 30 IC = -2A, VCE = -5V 4
Transition Frequency fT 150 MHz VCE = -10V, IC = -50mA, f = 100MHz 4
Output Capacitance Cobo 10 pF VCB = -10V, f = 1MHz 4
Collector-Base Voltage VCBO -40 V 2
Collector-Emitter Voltage VCEO -40 V 2
Emitter-Base Voltage VEBO -7 V 2
Continuous Collector Current IC -1 A 2
Peak Pulse Current ICM -2 A 2
Base Current IB -200 mA 2
Peak Base Current IBM -1 A 2
Power Dissipation PD 500 mW Note 6: collector lead on 15mm x 15mm 1oz copper, single-sided 1.6mm FR4 2
Thermal Resistance, Junction to Ambient RθJA 250 °C/W Note 6: collector lead on 15mm x 15mm 1oz copper, single-sided 1.6mm FR4 2
Thermal Resistance, Junction to Lead RθJL 197 °C/W Note 7: junction to solder-point (end of collector lead) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A (Note 8) 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C (Note 8) 2

CAD (KiCad official)

  • Symbol: FMMT591ATA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt591ata-etched.step / fmmt591ata-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt591ata.step / fmmt591ata.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 0c9f02ed07d07002, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF