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FMMT495TC

Diodes Incorporated · Bipolar Transistors - BJT · SOT-23

FMMT495TC from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base takes a base current IB rated at 200 mA maximum, and VBE(ON) is specified at 1.0 V maximum with IC = 500mA and VCE = 10V.
2 E passive Emitter is the reference terminal for the 7 V emitter-base breakdown rating (BVEBO) and for the VCE(SAT) limits of 0.2 V at 250mA and 0.3 V at 500mA.
3 C passive Collector carries 1 A continuous and 2 A peak pulse current (ICM) with a collector-emitter voltage rating of 150 V (VCEO).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 170 V 2
Collector-Emitter Voltage VCEO 150 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 1 A 2
Peak Pulse Current ICM 2 A 2
Base Current IB 200 mA 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge, Human Body Model ESD HBM 4000 V JEDEC class 3A (Note 8) 2
Electrostatic Discharge, Machine Model ESD MM 400 V JEDEC class C (Note 8) 2
Power Dissipation PD 500 mW Surface mounted on 15mm × 15mm FR4 PCB, 1 oz copper, still air (Note 6) 2
Collector-Base Breakdown Voltage BVCBO 170 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 150 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA 4
Collector Cutoff Current ICBO 100 nA VCB = 150V 4
Emitter Cutoff Current IEBO 100 nA VEB = 5V 4
Collector Emitter Cutoff Current ICES 100 nA VCE = 150V 4
Static Forward Current Transfer Ratio hFE 100 IC = 1mA, VCE = 10V 4
Static Forward Current Transfer Ratio hFE 100 300 IC = 250mA, VCE = 10V 4
Static Forward Current Transfer Ratio hFE 50 IC = 500mA, VCE = 10V 4
Static Forward Current Transfer Ratio hFE 10 IC = 1A, VCE = 10V 4
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 V IC = 250mA, IB = 25mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC = 500mA, IB = 50mA 4
Base-Emitter Turn-On Voltage VBE(ON) 1 V IC = 500mA, VCE = 10V 4
Base-Emitter Saturation Voltage VBE(SAT) 1 V IC = 500mA, IB = 50mA 4
Output Capacitance COBO 10 pF VCB = 10V, f = 1MHz 4
Transition Frequency fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz 4
Thermal Resistance, Junction to Ambient RθJA 250 °C/W Surface mounted on 15mm × 15mm FR4 PCB, 1 oz copper, still air (Note 6) 2
Thermal Resistance, Junction to Lead RθJL 197 °C/W Junction to solder point at end of collector lead (Note 7) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: FMMT495TC
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt495tc-etched.step / fmmt495tc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt495tc.step / fmmt495tc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 8e4c7c76035f56b5, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF