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FMMT491QTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

FMMT491QTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet lists a base current (IB) maximum of 200 mA and a VEBO maximum of 7 V.
2 E passive Emitter of the NPN transistor; the datasheet lists a VEBO maximum of 7 V relative to the base.
3 C passive Collector of the NPN transistor, the single lead on one side of the package; the datasheet lists VCEO of 60 V, VCBO of 80 V, IC of 1 A continuous and ICM of 2 A peak.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 80 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 60 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 7 8.1 V IE = 100µA 4
Collector Cutoff Current ICBO 100 nA VCB = 60V 4
Emitter Cutoff Current IEBO 100 nA VEB = 5.6V 4
Collector Emitter Cutoff Current ICES 100 nA VCE = 60V, VCES = 60V 4
Static Forward Current Transfer Ratio hFE 100 140 IC = 1mA, VCE = 5V 4
Static Forward Current Transfer Ratio hFE 100 150 300 IC = 500mA, VCE = 5V 4
Static Forward Current Transfer Ratio hFE 80 120 IC = 1A, VCE = 5V 4
Static Forward Current Transfer Ratio hFE 30 40 IC = 2A, VCE = 5V 4
Collector-Emitter Saturation Voltage VCE(SAT) 100 150 mV IC = 500mA, IB = 50mA 4
Collector-Emitter Saturation Voltage VCE(SAT) 160 250 mV IC = 1A, IB = 100mA 4
Base-Emitter Turn-On Voltage VBE(ON) 830 1000 mV IC = 1A, VCE = 5V 4
Base-Emitter Saturation Voltage VBE(SAT) 965 1100 mV IC = 1A, IB = 100mA 4
Output Capacitance COBO 10 pF VCB = 10V, f = 1MHz 4
Transition Frequency fT 150 MHz VCE = 10V, IC = 50mA, f = 100MHz 4
Collector-Base Voltage VCBO 80 V TA = +25°C 2
Collector-Emitter Voltage VCEO 60 V TA = +25°C 2
Emitter-Base Voltage VEBO 7 V TA = +25°C 2
Continuous Collector Current IC 1 A TA = +25°C 2
Peak Pulse Current ICM 2 A TA = +25°C 2
Base Current IB 200 mA TA = +25°C 2
Power Dissipation PD 500 mW TA = +25°C; device on 15mm x 15mm 1oz Cu FR-4, still air (Note 6) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge, Human Body Model ESD HBM 4000 V JEDEC Class 3A (JESD22-A114) 2
Electrostatic Discharge, Machine Model ESD MM 400 V JEDEC Class C (JESD22-A115) 2
Thermal Resistance, Junction to Ambient RθJA 250 °C/W Device on 15mm x 15mm 1oz Cu FR-4, still air (Note 6) 2
Thermal Resistance, Junction to Lead RθJL 197 °C/W Junction to solder-point at end of collector lead (Note 7) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: FMMT491QTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt491qta-etched.step / fmmt491qta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt491qta.step / fmmt491qta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 23268ca76dabc885, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF