component
FMMT4240-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFMMT4240-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
FMMT4240-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V and hFE is specified from 10 mA to 6 A at VCE=2 V. |
| 2 | E | passive | Emitter of the NPN transistor; collector current is rated 2 A continuous and the emitter-base breakdown voltage is 5 V min. |
| 3 | C | passive | Collector of the NPN transistor; VCBO and VCEO are both rated 50 V and IC is rated 2 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current -Continuous | IC | 2 | A | 1 | |||
| Power Dissipation | PC | 0.35 | W | 1 | |||
| Maximum Power Dissipation | PCM | 0.625 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | °C/W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 200 | °C/W | Note 1: mounted on ceramic substrate 15x15x0.6mm | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=100μA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage (note 2) | V(BR)CEO | 50 | V | IC=10mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA ,IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=40V,IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB=4V,IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 200 | VCE=2V, IC=10mA | 2 | |||
| DC current gain hFE(2) | hFE(2) | 300 | VCE=2V, IC=0.2A | 2 | |||
| DC current gain hFE(3) | hFE(3) | 200 | VCE=2V, IC=1A | 2 | |||
| DC current gain hFE(4) | hFE(4) | 100 | VCE=2V, IC=2A | 2 | |||
| DC current gain hFE(5) | hFE(5) | 40 | VCE=2V, IC=6A | 2 | |||
| Collector-emitter saturation voltage VCE(sat)1 | VCE(sat)1 | 20 | mV | IC=0.1A,IB=10mA | 2 | ||
| Collector-emitter saturation voltage VCE(sat)2 | VCE(sat)2 | 200 | mV | IC=1A,IB=10mA | 2 | ||
| Collector-emitter saturation voltage VCE(sat)3 | VCE(sat)3 | 220 | mV | IC=2A,IB=100mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=2A,IB=50mA | 2 | ||
| Base-emitter on voltage | VBE(on) | 1 | V | IC=2A, VCE=2V | 2 |
CAD (KiCad official)
- Symbol:
FMMT4240-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fmmt4240-hxy-etched.step/fmmt4240-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fmmt4240-hxy.step/fmmt4240-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
f01033190bee3c38, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).