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FKBA4903

Public Made by Adom

by adom

SINO IC MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FKBA4903

SINO IC · MOSFETs · DFN-8(5x6)

FKBA4903 from SINO IC, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the datasheet gives VDS of 40V (N-channel) or -40V (P-channel) and VGS of ±20V.
2 G1 input Gate of MOSFET 1; gate-source voltage is rated ±20V and the device is ESD protected.
3 S2 passive Source of MOSFET 2; the datasheet gives VDS of 40V (N-channel) or -40V (P-channel) and VGS of ±20V.
4 G2 input Gate of MOSFET 2; gate-source voltage is rated ±20V and the device is ESD protected.
5 D2 passive Drain of MOSFET 2, tied to pin 6 and the D2 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel).
6 D2 passive Drain of MOSFET 2, tied to pin 5 and the D2 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel).
7 D1 passive Drain of MOSFET 1, tied to pin 8 and the D1 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel).
8 D1 passive Drain of MOSFET 1, tied to pin 7 and the D1 exposed pad; drain-source voltage is rated 40V (N-channel) or -40V (P-channel).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer SINO IC
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Channel Drain-Source Voltage VDS 40 V 1
P-Channel Drain-Source Voltage VDS -40 V 1
N-Channel Gate-Source Voltage VGS -20 20 V 1
P-Channel Gate-Source Voltage VGS -20 20 V 1
N-Channel Drain Current, Continuous ID 26 A Continuous 1
P-Channel Drain Current, Continuous ID -25 A Continuous 1
N-Channel Drain Current, Pulsed ID 47 A Pulsed 1
P-Channel Drain Current, Pulsed ID -46 A Pulsed 1
Total Power Dissipation (N and P channel, printed as one row) PD 35.7 W @TA=25℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
N-Channel Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS= VGS, ID=250μA 2
N-Channel Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=12A 2
N-Channel Static Drain-Source On-Resistance RDS(ON) 30 50 mΩ VGS=4.5V, ID=10A 2
P-Channel Gate Threshold Voltage VGS(th) -1 -2.5 V VDS=VGS, ID=250μA 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 30 45 mΩ VGS=-10V, ID=-8A 3
P-Channel Static Drain-Source On-Resistance RDS(ON) 55 70 mΩ VGS=-4.5V, ID=-4A 3
N-Channel Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA, 2
N-Channel Drain to Source Leakage Current IDSS 1 μA VDS=32V, VGS=0V 2
N-Channel Gate-Body Leakage Current IGSS 100 nA VGS=20 V 2
N-Channel Forward Transconductance gFS 8 S VDS=5V, ID=12A 2
N-Channel Input Capacitance Ciss 593 pF VGS=0V, VDS=15V, f=1MHz 2
N-Channel Output Capacitance Coss 76 pF 2
N-Channel Reverse Transfer Capacitance Crss 56 pF 2
N-Channel Total Gate Charge Qg 5.5 nC VGS=4.5V, VDD=20V, ID=12A 2
N-Channel Gate Source Charge Qgs 1.25 nC 2
N-Channel Gate Drain Charge Qgd 2.5 nC 2
N-Channel Turn-On Delay Time td(on) 8.9 ns VDD=20V, RGEN=3.3Ω, ID=1A 2
N-Channel Turn-Off Delay Time td(off) 41 ns 2
N-Channel Turn-On Rise Time td(r) 2.2 ns 2
N-Channel Turn-Off Fall Time td(f) 2.7 ns 2
N-Channel Drain-Source Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1A 2
N-Channel Continuous Source Current IS 23 A VG=VD=0V 2
N-Channel Pulsed Source Current ISM 46 A 2
P-Channel Drain-Source Breakdown Voltage BVDSS -40 V ID=-250μA, VGS=0V 3
P-Channel Drain to Source Leakage Current IDSS 1 μA VDS=-32V, VGS=0V 3
P-Channel Gate-Body Leakage Current IGSS 100 nA VGS=20V 3
P-Channel Forward Transconductance gFS 12.6 S VDS=-5V, ID=-8A 3
P-Channel Input Capacitance Ciss 1004 pF VGS=0V, VDS=-15V, f=1MHz 3
P-Channel Output Capacitance Coss 108 pF 3
P-Channel Reverse Transfer Capacitance Crss 80 pF 3
P-Channel Total Gate Charge Qg 9 nC VGS=-4.5V, VDS=-20V, ID=-12A 3
P-Channel Gate Source Charge Qgs 2.54 nC 3
P-Channel Gate Drain Charge Qgd 3.1 nC 3
P-Channel Turn-On Delay Time td(on) 19.2 ns VGS=-10V, VDS=-15V, RGEN=3.3Ω, ID=-1A 3
P-Channel Turn-Off Delay Time td(off) 48.6 ns 3
P-Channel Turn-On Rise Time td(r) 12.8 ns 3
P-Channel Turn-Off Fall Time td(f) 4.6 ns 3
P-Channel Drain-Source Diode Forward Voltage VSD -1 V VGS=0V,IS=-1A 3
P-Channel Continuous Source Current IS -20 A VG=VD=0V 3
P-Channel Pulsed Source Current ISM -40 A 3

CAD (KiCad official)

  • Symbol: FKBA4903
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: fkba4903-etched.step / fkba4903-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fkba4903.step / fkba4903.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (8 pp, sha256 327d97126184c96b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF