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FJX3904TF-HXY

Public Made by Adom

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HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FJX3904TF-HXY

HXY MOSFET · Bipolar (BJT) · SOT-323

FJX3904TF-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 5 V and continuous collector current is 200 mA.
2 E passive Emitter of the NPN transistor; emitter-base breakdown voltage VEBO is 5 V minimum at IE=100 µA.
3 C passive Collector of the NPN transistor; VCEO is 40 V, VCBO is 60 V, and IC is 200 mA continuous.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Base Voltage VCBO 60 V 1
Collector - Emitter Voltage VCEO 40 V 1
Emitter - Base Voltage VEBO 5 V 1
Collector Current - Continuous IC 200 mA 1
Collector Power Dissipation PC 200 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
Collector- base breakdown voltage VCBO 60 V Ic= 100 μA， IE= 0 (Note.1) 1
Collector- emitter breakdown voltage VCEO 40 V Ic= 1 mA， IB= 0 1
Emitter - base breakdown voltage VEBO 5 V IE= 100μA， IC= 0 1
Collector-base cut-off current ICBO 60 nA VCB= 60 V , IE= 0 (Note.1) 1
Collector- emitter cut-off current ICEO 700 nA VCE= 40 V , IE= 0 (Note.1) 1
Collector- emitter cut-off current ICEX 50 nA VCE= 30 V ,VBE(off)= 3V 1
Emitter cut-off current IEBO 100 nA VEB= 5V , IC=0 1
Collector-emitter saturation voltage VCE(sat) 0.25 V IC=10 mA, IB=1 mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50 mA, IB=5 mA 1
Base - emitter saturation voltage VBE(sat) 0.85 V IC=10 mA, IB=1 mA 1
Base - emitter saturation voltage VBE(sat) 0.95 V IC=50 mA, IB=5 mA 1
DC current gain hFE(1) 40 VCE= 1V, IC= 100 uA 1
DC current gain hFE(2) 70 VCE= 1V, IC= 1 mA 1
DC current gain hFE(3) 100 300 VCE= 1V, IC= 10 mA 1
DC current gain hFE(4) 60 VCE= 1V, IC= 50 mA 1
Transition frequency fT 300 MHz VCE= 20V, IC= 10mA, f=100MHz 1
Collector input capacitance Cib 8 pF VEB= 0.5V, IE= 0, f=1MHz 1
Collector output capacitance Cob 4 pF VCB= 5V, IE= 0, f=1MHz 1
Delay time td 35 nS VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=1mA 1
Rise time tr 35 nS VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=1mA 1
Storage time ts 225 nS VCC=3V, IC=10mA, IB1=IB2=1mA 1
Fall time tf 75 nS VCC=3V, IC=10mA, IB1=IB2=1mA 1

CAD (KiCad official)

  • Symbol: FJX3904TF-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: fjx3904tf-hxy-etched.step / fjx3904tf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fjx3904tf-hxy.step / fjx3904tf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 9a374f65b1f39f33, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF