component

FJV42MTF

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FJV42MTF

onsemi · Bipolar (BJT) · SOT-23-3

FJV42MTF from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN high-voltage transistor; the datasheet's absolute maximum emitter-base voltage is VEBO 6 V and the collector current limit is IC 500 mA.
2 Emitter passive Emitter terminal of the NPN transistor; the datasheet's absolute maximum emitter-base voltage is VEBO 6 V.
3 Collector passive Collector terminal of the NPN transistor; the datasheet's absolute maximum ratings are VCEO 350 V, VCBO 350 V and IC 500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 350 V IC = 5.0 mA, IB = 0 3
Collector-Base Breakdown Voltage V(BR)CBO 350 V IC = 100 μA, IE = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 100 μA, IC = 0 3
Collector Cut-Off Current ICBO 0.1 μA VCB = 200 V, IE = 0 3
Emitter Cut-Off Current IEBO 0.1 μA VEB = 5.0 V, IC = 0 3
DC Current Gain hFE 25 IC = 1.0 mA, VCE = 10 V 3
DC Current Gain hFE 40 IC = 10 mA, VCE = 10 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 20 mA, IB = 2.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 20 mA, IB = 2.0 mA 3
Current Gain - Bandwidth Product fT 50 MHz IC = 10 mA, VCE = 20 V, f = 100 MHz 3
Output Capacitance Ccb 3 pF VCB = 20 V, IE = 0, f = 1.0 MHz 3
Collector-Emitter Voltage VCEO 350 V 2
Collector-Base Voltage VCBO 350 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current IC 500 mA 2
Storage Temperature Range TSTG -55 150 °C 2
Power Dissipation PD 350 mW PCB: FR-4, 76 mm x 114 mm x 1.57 mm, minimum land pattern (Note 1) 2
Thermal Resistance, Junction-to-Ambient RθJA 357 °C/W PCB: FR-4, 76 mm x 114 mm x 1.57 mm, minimum land pattern (Note 1) 2

CAD (KiCad official)

  • Symbol: FJV42MTF
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: fjv42mtf-etched.step / fjv42mtf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fjv42mtf.step / fjv42mtf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 f74d75f4cbd99b19, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF