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FIR4N65FG-VB

VBsemi Elec · MOSFETs · TO-220F

FIR4N65FG-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage limited to ±30 V in the absolute maximum ratings.
2 D passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 650 V.
3 S passive Source terminal of the N-channel MOSFET, with continuous source-drain diode current IS rated at 4 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: FIR4N65FG-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 f0980bc0b44f0a5f, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF