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FH9261-DBE
Public Made by Adomby adom
XIN FEI HONG Battery Management, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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FH9261-DBE
XIN FEI HONG · Battery Management · SOT-23-6
FH9261-DBE from XIN FEI HONG, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | DO | output | Discharge-control MOSFET gate drive output that goes low to turn the discharge MOSFET off on over-discharge, discharge over-current or load short; its output voltage is limited to VSS-0.3 V to VDD+0.3 V (absolute maximum). |
| 2 | VM | input | Current-sense and charger-detection terminal, monitored against VSS for charge and discharge over-current and short-circuit thresholds; its voltage is limited to VDD-28 V to VDD+0.3 V (absolute maximum). |
| 3 | CO | output | Charge-control MOSFET gate drive output that goes low to turn the charge MOSFET off on over-charge or charge over-current; its output voltage is limited to VVM-0.3 V to VDD+0.3 V (absolute maximum). |
| 4 | NC | unconnected | No-connection pin; the datasheet gives no electrical function or limits for it. |
| 5 | VDD | power_in | Positive supply input for the single-cell Li-ion/Li-polymer protection IC, with an operating supply range of VDD-VSS = -1.0 V to 7.0 V and an absolute maximum of VSS-0.3 V to VSS+8.0 V. |
| 6 | VSS | power_in | Ground/reference pin for the protection IC, to which the battery negative terminal and the VM and DO thresholds are referenced. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23-6 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 芯片电源电压 (supply voltage VDD-VSS) | VDD | 1 | 7 | V | 4 | ||
| 正常工作电流 (normal operating current) | IVDD | 0.9 | 1.5 | 4 | μA | VDD=3.5V | 4 |
| 休眠时消耗电流 (power-down current) | IPDN | 100 | nA | VDD =1.5V | 4 | ||
| 过充电保护电压 (overcharge detection voltage) | VOC | 4.375 | 4.425 | 4.475 | V | VDD =3.5→4.8V | 4 |
| 过充电解除电压 (overcharge release voltage) | VOCR | 4.125 | 4.225 | 4.325 | V | VDD =4.8→3.5V | 4 |
| 过充电保护延时 (overcharge detection delay) | TOC | 700 | 1000 | 1300 | ms | VDD =3.5→4.8V | 4 |
| 过充电保护解除延时 (overcharge release delay) | TOCR | 0.5 | 1 | 1.5 | ms | VDD =4.8→3.5V | 4 |
| 过放电保护电压 (overdischarge detection voltage) | VOD | 2.9 | 3 | 3.1 | V | VDD=3.5→2.0V | 4 |
| 过放电解除电压 (overdischarge release voltage) | VODR | 2.9 | 3 | 3.1 | V | VDD =2.0→3.5V | 4 |
| 过放电保护延时 (overdischarge detection delay) | TOD | 89.6 | 128 | 166.4 | ms | VDD =3.5→2.0V | 4 |
| 过放电保护解除延时 (overdischarge release delay) | TODR | 0.5 | 1 | 1.5 | ms | VDD =2.0→3.5V | 4 |
| 放电过流保护电压 (discharge overcurrent detection voltage) | VEC | 35 | 50 | 65 | mV | VM-VSS=0→0.20V | 4 |
| 放电过流保护延时 (discharge overcurrent detection delay) | TEC | 11.2 | 16 | 20.8 | ms | VM-VSS=0→0.20V | 4 |
| 放电过流保护解除延时 (discharge overcurrent release delay) | TECR | 0.5 | 1 | 1.5 | ms | VM-VSS=0.20→0V | 4 |
| 充电过流保护电压 (charge overcurrent detection voltage) | VCHA | -70 | -50 | -30 | mV | VSS-VM=0→0.30V | 4 |
| 充电过流保护延时 (charge overcurrent detection delay) | TCHA | 5.6 | 8 | 10.4 | ms | VSS-VM=0→0.30V | 4 |
| 充电过流保护解除延时 (charge overcurrent release delay) | TCHAR | 0.5 | 1 | 1.5 | ms | VSS-VM=0.30→0V | 4 |
| 短路保护电压 (short-circuit detection voltage) | VSHORT | 0.4 | 0.5 | 0.6 | V | VM-VSS=0→1.5V | 4 |
| 短路保护延时 (short-circuit detection delay) | TSHORT | 140 | 280 | 560 | μs | VM-VSS=0→1.5V | 4 |
| 允许向0V电池充电的充电器电压 (0V charging charger voltage) | V0CH | 0 | 0.7 | 1.5 | V | 允许向 0V 电池充电功能 | 4 |
| 短路保护解除延时 (short-circuit release delay) | TSHORTR | 0.5 | 1 | 1.5 | ms | VM-VSS=1.5→0V | 4 |
| VM-VSS端子间电阻 (VM-VSS internal resistance) | RVMS | 750 | 1500 | 3000 | KΩ | 4 | |
| VM-VSS端子间电阻 (VM-VSS resistance, second printed row) | 10 | 20 | 30 | KΩ | VDD=3.5V, VVM=1.0V | 4 | |
| 放电过流解除电压 (discharge overcurrent release voltage, VDD-referenced offsets) | VRIOV | -1.4 | -1 | -0.6 | V | 4 | |
| 芯片电源电压 abs max (VDD-VSS, referenced to VSS) | VDD | -0.3 | 8 | V | 3 | ||
| VM输入端子电压 abs max (referenced to VDD) | VVM | -28 | 0.3 | V | 3 | ||
| CO输出端子电压 abs max (min referenced to VVM, max referenced to VDD) | VCO | -0.3 | 0.3 | V | 3 | ||
| DO输出端子电压 abs max (min referenced to VSS, max referenced to VDD) | VDO | -0.3 | 0.3 | V | 3 | ||
| 工作温度范围 (operating temperature) | TOPR | -40 | 85 | °C | 3 | ||
| 储存温度范围 (storage temperature) | TSTG | -55 | 125 | °C | 3 |
CAD (KiCad official)
- Symbol:
FH9261-DBE - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fh9261-dbe-etched.step/fh9261-dbe-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh9261-dbe.step/fh9261-dbe.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (9 pp, sha256
2ca4dfa1693cca6e, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).