component

FH8913P

Public Made by Adom

by adom

XIN FEI HONG MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 27d ago
viewers fh8913p: viewers · Ray 27d ago
fh8913p-etched.glb fh8913p: factory component page (tier=lcsc) · Ray 27d ago
fh8913p-etched.step fh8913p: factory component page (tier=lcsc) · Ray 27d ago
fh8913p-hero.glb fh8913p: hero GLB from the etched model (keeps the MPN mark) · Ray 27d ago
fh8913p-hero.overlay.json Publish 0.1.0 · Ray 27d ago
fh8913p.glb Publish 0.1.0 · Ray 27d ago
fh8913p.kicad_mod Publish 0.1.0 · Ray 27d ago
fh8913p.kicad_sym Publish 0.1.0 · Ray 27d ago
fh8913p.lbr Publish 0.1.0 · Ray 27d ago
fh8913p.step Publish 0.1.0 · Ray 27d ago
package.json Publish 0.1.0 · Ray 27d ago
page.json fh8913p: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 23d ago
README.md fh8913p: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 23d ago

FH8913P

XIN FEI HONG · MOSFETs · SO-8

FH8913P from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of P-channel MOSFET 2 (VDS rated -30V, continuous ID -11A).
2 G2 input Gate of P-channel MOSFET 2 (VGS maximum ±20V).
3 S1 passive Source of P-channel MOSFET 1 (VDS rated -30V, continuous ID -11A).
4 G1 input Gate of P-channel MOSFET 1 (VGS maximum ±20V).
5 D1 passive Drain of P-channel MOSFET 1 (pulsed drain current IDM -44A).
6 D1 passive Drain of P-channel MOSFET 1, tied to pin 5 (pulsed drain current IDM -44A).
7 D2 passive Drain of P-channel MOSFET 2 (pulsed drain current IDM -44A).
8 D2 passive Drain of P-channel MOSFET 2, tied to pin 7 (pulsed drain current IDM -44A).

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -11 A TA=25℃, VGS @ -10V 1
Continuous Drain Current ID -9 A TA=70℃, VGS @ -10V 1
Pulsed Drain Current IDM -44 A 1
Single Pulse Avalanche Energy EAS 78 mJ 1
Avalanche Current IAS -30 A 1
Total Power Dissipation PD 1.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 40 ℃/W t≦10s 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 12 14 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 18 23 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-30V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -11 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -44 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ -0.023 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient ΔVGS(th) 4.6 mV/℃ 2
Forward Transconductance gfs 24 S VDS=-5V, ID=-5A 2
Gate Resistance Rg 9 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 22 nC VDS=-15V, VGS=-4.5V, ID=-5A 2
Gate-Source Charge Qgs 5.1 nC 2
Gate-Drain Charge Qgd 7.3 nC 2
Turn-On Delay Time Td(on) 33.8 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 35.8 ns 2
Turn-Off Delay Time Td(off) 72.8 ns 2
Fall Time Tf 10.6 ns 2
Input Capacitance Ciss 1480 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 310 pF 2
Reverse Transfer Capacitance Crss 237 pF 2

CAD (KiCad official)

  • Symbol: FH8913P
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fh8913p-etched.step / fh8913p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh8913p.step / fh8913p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (5 pp, sha256 04ab7b9e554d167e, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF