component
FH8810
Public Made by Adomby adom
XIN FEI HONG MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFH8810
XIN FEI HONG · MOSFETs · SOT-23-6
FH8810 from XIN FEI HONG, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin-1 marker side), part of a dual N-channel 20V device. |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied together (D1 and D2 joined in the schematic). |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2, ESD protected (2000V HBM), absolute maximum VGS ±8V, logic-level drive down to 1.8V. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, internally tied together (D1 and D2 joined in the schematic). |
| 6 | G1 | input | Gate of MOSFET 1, ESD protected (2000V HBM), absolute maximum VGS ±8V, logic-level drive down to 1.8V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source On-State Resistance (VGS=4.5V, ID=4A) | RDS(ON) | 18 | mΩ | VGS=4.5V,ID=4A | 2 | ||
| Drain-Source On-State Resistance (VGS=2.5V, ID=3A) | RDS(ON) | 23 | mΩ | VGS=2.5V,ID=3A | 2 | ||
| Drain-Source On-State Resistance (VGS=1.8V, ID=3A) | RDS(ON) | 29 | mΩ | VGS=1.8V,ID=3A | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Drain Current-Continuous | ID | 8 | A | 1 | |||
| Drain Current-Pulsed | IDM | 30 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 83 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±8V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1A | 2 | ||
| Diode Forward Current | IS | 3 | A | Note 2 | 2 |
CAD (KiCad official)
- Symbol:
FH8810 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fh8810-etched.step/fh8810-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh8810.step/fh8810.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (6 pp, sha256
f9f55e5027035633, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).