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FH8712K2

XIN FEI HONG · MOSFETs · SOT-23-6

FH8712K2 from XIN FEI HONG, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS 20V, ID 7.5A rating).
2 D1/D2 passive Drain common to both MOSFETs (D1 and D2 tied together), shorted internally to pin 5; VDS max 20V.
3 S2 passive Source of MOSFET 2 (N-channel, VDS 20V).
4 G2 input Gate of MOSFET 2; VGS max ±12V, usable with gate drive as low as 2.5V.
5 D1/D2 passive Drain common to both MOSFETs (D1 and D2 tied together), shorted internally to pin 2; VDS max 20V.
6 G1 input Gate of MOSFET 1; VGS max ±12V, usable with gate drive as low as 2.5V.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package SOT-23-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 11 14 mΩ VGS=4.5V, ID=5.0A 2
Drain-Source On-State Resistance RDS(ON) 12 15 mΩ VGS=3.8V, ID=5.0A 2
Drain-Source On-State Resistance RDS(ON) 13 17 mΩ VGS=2.5V, ID=4A 2
Forward Transconductance gFS 20 S VDS=5V, ID=7A 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Input Capacitance Clss 1180 pF VDS=10V, VGS=0V, F=1.0MHz 2
Output Capacitance Coss 205 pF VDS=10V, VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 165 pF VDS=10V, VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 8 nS VDD=10V, RL=1.35Ω, VGS=5V, RGEN=3Ω 2
Turn-on Rise Time tr 13 nS VDD=10V, RL=1.35Ω, VGS=5V, RGEN=3Ω 2
Turn-Off Delay Time td(off) 58 nS VDD=10V, RL=1.35Ω, VGS=5V, RGEN=3Ω 2
Turn-Off Fall Time tf 16 nS VDD=10V, RL=1.35Ω, VGS=5V, RGEN=3Ω 2
Total Gate Charge Qg 15 nC 2
Gate-Source Charge Qgs 0.8 nC 2
Gate-Drain Charge Qgd 3.2 nC VDS=10V, ID=7A, VGS=4.5V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A 2
Diode Forward Current IS 7 A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 7.5 A Note 1 1
Drain Current-Pulsed IDM 32 A Note 1, Note 3 1
Maximum Power Dissipation PD 1.25 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 102 ℃/W Note 2 (surface mounted on FR4 board, t ≤ 10 sec) 1

CAD (KiCad official)

  • Symbol: FH8712K2
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fh8712k2-etched.step / fh8712k2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh8712k2.step / fh8712k2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (6 pp, sha256 db58cd72d483ff68, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF