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FH8205A

XIN FEI HONG · MOSFETs · TSSOP-8

FH8205A from XIN FEI HONG, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Common drain of the two N-channel MOSFETs (D1 and D2 tied together internally, shorted to pin 8); VDS rating 20 V.
2 S1 passive Source of MOSFET 1, tied to pin 3; continuous drain current 5 A at TJ=25°C.
3 S1 passive Source of MOSFET 1, tied to pin 2; continuous drain current 5 A at TJ=25°C.
4 G1 input Gate of MOSFET 1; gate-source voltage limit ±12 V, threshold 0.5 V min to 1.2 V max at 250 µA.
5 G2 input Gate of MOSFET 2; gate-source voltage limit ±12 V, threshold 0.5 V min to 1.2 V max at 250 µA.
6 S2 passive Source of MOSFET 2, tied to pin 7; continuous drain current 5 A at TJ=25°C.
7 S2 passive Source of MOSFET 2, tied to pin 6; continuous drain current 5 A at TJ=25°C.
8 D passive Common drain of the two N-channel MOSFETs (D1 and D2 tied together internally, shorted to pin 1); VDS rating 20 V.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package TSSOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance at VGS=4.5V RDS(ON) 20 27 mΩ VGS=4.5V, ID=4.5A 2
Drain-Source On-State Resistance at VGS=2.5V RDS(ON) 26 32 mΩ VGS=2.5V, ID=3.5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1.7A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 5 A TJ=25℃ 1
Pulsed Drain Current IDM 20 A Pulsed; pulse width ≤300μs, duty cycle ≤2% (note b) 1
Drain-Source Diode Forward Current IS 2.5 A 1
Maximum Power Dissipation PD 1.25 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W Surface mounted on FR4 board, T<10 sec (note a) 1

CAD (KiCad official)

  • Symbol: FH8205A
  • Footprint: Package_SO:TSSOP-8_3x3mm_P0.65mm
  • 3D model: TSSOP-8 (KiCad packages3D, STEP)
  • 3D model files: fh8205a-etched.step / fh8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh8205a.step / fh8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (6 pp, sha256 4e3f002002284409, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF