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FH4811

Public Made by Adom

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XIN FEI HONG MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

markdown

FH4811

XIN FEI HONG · MOSFETs · SO-8

FH4811 from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 at the dot-marked corner of the SO-8 top view.
2 S passive Source of the N-channel MOSFET, tied with the other source pins.
3 S passive Source of the N-channel MOSFET, tied with the other source pins.
4 G input Gate of the N-channel MOSFET; VGS maximum ±20V, threshold 1V to 2V at ID=1mA.
5 D passive Drain of the N-channel MOSFET; VDS maximum 30V, ID 11A at TA=25°C.
6 D passive Drain of the N-channel MOSFET, tied with the other drain pins.
7 D passive Drain of the N-channel MOSFET, tied with the other drain pins.
8 D passive Drain of the N-channel MOSFET, tied with the other drain pins.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current, VGS @ 10V (TA=25℃) ID@TA=25℃ 11 A VGS @ 10V 1
Drain Current, VGS @ 10V (TA=70℃) ID@TA=70℃ 8.7 A VGS @ 10V 1
Pulsed Drain Current IDM 44 A 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W Surface mounted on 1 in2 copper pad of FR4 board, t<10sec 1
Maximum Thermal Resistance, Junction-ambient (minimum copper pad) Rthj-a 135 ℃/W Mounted on minimum copper pad (note 3) 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 11.5 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 13 18 mΩ VGS=4.5V, ID=5A 2
Gate Threshold Voltage VGS(th) 1 2 V VDS=VGS, ID=1mA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 14 22.4 nC ID=5A 2
Input Capacitance Ciss 790 1280 pF VGS=0V 2
Gate Resistance Rg 2.5 5 Ω f=1.0MHz 2
Forward On Voltage VSD 1.2 V IS=1.7A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FH4811
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fh4811-etched.step / fh4811-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh4811.step / fh4811.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (5 pp, sha256 4d61255e27469be7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF