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FH4608

Public Made by Adom

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XIN FEI HONG MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FH4608

XIN FEI HONG · MOSFETs · SO-8

FH4608 from XIN FEI HONG, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60V, 6A).
2 G1 input Gate of the N-channel MOSFET, VGS rated ±20V.
3 S2 passive Source of the P-channel MOSFET (-60V, -4.8A).
4 G2 input Gate of the P-channel MOSFET, VGS rated ±20V.
5 D2 passive Drain of the P-channel MOSFET, VDS rated -60V, ID -4.8A continuous.
6 D2 passive Drain of the P-channel MOSFET, VDS rated -60V, ID -4.8A continuous (internally common with pin 5).
7 D1 passive Drain of the N-channel MOSFET, VDS rated 60V, ID 6A continuous.
8 D1 passive Drain of the N-channel MOSFET, VDS rated 60V, ID 6A continuous (internally common with pin 7).

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage, N-channel VDS 60 V N-channel; absolute maximum ratings table (TA=25℃ unless noted) 1
Drain-source voltage, P-channel VDS -60 V P-channel; absolute maximum ratings table (TA=25℃ unless noted) 1
Continuous drain current, N-channel ID 6 A N-channel; absolute maximum ratings table (TA=25℃ unless noted) 1
Continuous drain current, P-channel ID -4.8 A P-channel; absolute maximum ratings table (TA=25℃ unless noted) 1
Pulsed drain current, N-channel IDM 24 A N-channel; pulse conditions not printed 1
Pulsed drain current, P-channel IDM -19 A P-channel; pulse conditions not printed 1
Gate-source voltage, N-channel and P-channel VGS -20 20 V N-CH and P-CH columns both ±20 1
Maximum operating junction temperature TJ 150 ℃ 1
Storage temperature range TSTG -55 150 ℃ 1
Power dissipation PD 2 W TA=25℃ 1
Power dissipation PD 0.8 W TA=100℃ 1
Thermal resistance, junction to ambient RθJA 75.5 ℃/W Junction to ambient; value given without min/max labels 1
Diode forward voltage, N-channel VSD 0.7 1.2 V ISD=2A,VGS=0V 2
Diode forward voltage, P-channel VSD -0.7 -1.2 V ISD=-1A,VGS=0V 2
Drain-source breakdown voltage, N-channel BVDSS 60 V VGS=0V,IDS=250uF (as printed) 2
Drain-source breakdown voltage, P-channel BVDSS -60 V VGS=0V,IDS=-250uF (as printed) 2
Zero gate voltage drain current, N-channel IDSS 1 uA VDS=48V,VGS=0V 2
Zero gate voltage drain current, P-channel IDSS -1 uA VDS=-48V,VGS=0V 2
Gate threshold voltage, N-channel VGS(TH) 1 1.8 2.5 V VDS=VGS,IDS=250uA 2
Gate threshold voltage, P-channel VGS(TH) -1 -1.8 -2.5 V VDS=VGS,IDS=-250uA 2
Gate leakage current, N-channel IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate leakage current, P-channel IGSS -100 100 nA VGS=±20V,VDS=0V 2
Static drain-source on-resistance, N-channel RDS(ON) 35 46 mΩ VGS=4.5V,IDS=3A 2
Static drain-source on-resistance, P-channel RDS(ON) 60 79 mΩ VGS=-4.5V,IDS=-2A 2
Static drain-source on-resistance, N-channel RDS(ON) 27 34 mΩ VGS=10V,IDS=5A 2
Static drain-source on-resistance, P-channel RDS(ON) 48 60 mΩ VGS=-10V,IDS=-3A 2
Turn-on delay time, N-channel td(on) 13 23 ns VDD=15V,RL=15Ω 2
Turn-on delay time, P-channel td(on) 15 28 ns VDD=-15V,RL=-15Ω 2
Turn-on rise time, N-channel Tr 21 29 ns IDS=1A,VGEN=10V,RG=6Ω 3
Turn-on rise time, P-channel Tr 15 29 ns IDS=-1A,VGEN=-10V,RG=6Ω 3
Turn-off delay time, N-channel Td(off) 36 62 ns IDS=1A,VGEN=10V,RG=6Ω 3
Turn-off delay time, P-channel Td(off) 35 60 ns IDS=-1A,VGEN=-10V,RG=6Ω 3
Turn-off fall time, N-channel Tf 20 36 ns IDS=1A,VGEN=10V,RG=6Ω 3
Turn-off fall time, P-channel Tf 15 30 ns IDS=-1A,VGEN=-10V,RG=6Ω 3
Gate resistance, N-channel RG 2 Ω VGS=0V,VDS=0V,F=1MHZ 2
Gate resistance, P-channel RG 19 Ω VGS=0V,VDS=0V,F=1MHZ 2
Input capacitance, N-channel CISS 1050 pF VGS=0V,VDS=25V,F=1MHZ 2
Input capacitance, P-channel CISS 1370 pF VGS=0V,VDS=-25V,F=1MHZ 2
Output capacitance, N-channel COSS 135 pF VGS=0V,VDS=25V,F=1MHZ 2
Output capacitance, P-channel COSS 162 pF VGS=0V,VDS=-25V,F=1MHZ 2
Reverse transfer capacitance, N-channel CrSS 85 pF VGS=0V,VDS=25V,F=1MHZ 2
Reverse transfer capacitance, P-channel CrSS 97 pF VGS=0V,VDS=-25V,F=1MHZ 2
Total gate charge, N-channel Qg 4.1 nC VDS=15V,VGS=10V,IDS=7A 3
Total gate charge, P-channel Qg 9.2 nC VDS=-15V,VGS=-10V,IDS=-5.5A 3
Gate-source charge, N-channel Qgs 1 nC VDS=15V,VGS=10V,IDS=7A 3
Gate-source charge, P-channel Qgs 1.6 nC VDS=-15V,VGS=-10V,IDS=-5.5A 3
Gate-drain charge, N-channel Qgd 2.1 nC VDS=15V,VGS=10V,IDS=7A 3
Gate-drain charge, P-channel Qgd 2.2 nC VDS=-15V,VGS=-10V,IDS=-5.5A 3

CAD (KiCad official)

  • Symbol: FH4608
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fh4608-etched.step / fh4608-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh4608.step / fh4608.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (9 pp, sha256 f2fe44ddc1327c93, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF