Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

FH4606K

鑫飞宏 · IC · SOT-23-6

FH4606K from 鑫飞宏, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (VDS 30V, VGS ±12V max).
2 S2 passive Source of the P-channel MOSFET (VDS -30V, ID -7.1A at TA=25°C).
3 G2 input Gate of the P-channel MOSFET (VGS ±12V max).
4 D2 passive Drain of the P-channel MOSFET (ID -7.1A continuous, -28.4A pulsed).
5 S1 passive Source of the N-channel MOSFET (ID 7.2A at TA=25°C).
6 D1 passive Drain of the N-channel MOSFET (ID 7.2A continuous, 28.8A pulsed).

Key specifications

Parameter Value
Manufacturer 鑫飞宏
Package SOT-23-6
Category
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 30 V 1
N-ch Gate-Source Voltage VGS -12 12 V 1
N-ch Continuous Drain Current ID 7.2 A TA=25℃ 1
N-ch Continuous Drain Current ID 5.4 A TA=80℃ 1
N-ch Pulsed Drain Current IDM 28.8 A Note 1 1
P-ch Drain-Source Voltage VDS -30 V 1
P-ch Gate-Source Voltage VGS -12 12 V 1
P-ch Continuous Drain Current ID -7.1 A TA=25℃ 1
P-ch Continuous Drain Current ID -5.1 A TA=80℃ 1
P-ch Pulsed Drain Current IDM -28.4 A Note 1 1
Maximum Power Dissipation PD 2 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 98 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
N-ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
N-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
N-ch Gate Threshold Voltage VGS(th) 0.5 0.8 1.1 V VDS=VGS,ID=250μA 2
N-ch Drain-Source On-State Resistance RDS(ON) 20 27 mΩ VGS=10V, ID=4A 2
N-ch Drain-Source On-State Resistance RDS(ON) 23 29 mΩ VGS=4.5V, ID=4A 2
N-ch Drain-Source On-State Resistance RDS(ON) 31 42 mΩ VGS=2.5V, ID=2A 2
N-ch Diode Forward Voltage VSD 0.8 1.2 V VGS=0V,IS=1A 2
P-ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 3
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 3
P-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 3
P-ch Gate Threshold Voltage VGS(th) -0.5 -0.8 -1.4 V VDS=VGS,ID=-250μ 3
P-ch Drain-Source On-State Resistance RDS(ON) 33 48 mΩ VGS=-10V, ID=-4A 3
P-ch Drain-Source On-State Resistance RDS(ON) 38 55 mΩ VGS=-4.5V, ID=-4A 3
P-ch Drain-Source On-State Resistance RDS(ON) 51 73 mΩ VGS=-2.5V, ID=-2A 3
P-ch Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V,IS=-1A 3

CAD (KiCad official)

  • Symbol: FH4606K
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: fh4606k-etched.step / fh4606k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh4606k.step / fh4606k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: 鑫飞宏 datasheet (9 pp, sha256 fb359834d33f8802, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF