component
FH4604D
Public Made by Adomby adom
XIN FEI HONG MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| fh4604d-etched.glb | 14d ago |
| fh4604d-etched.step | 14d ago |
| fh4604d-hero.glb | 14d ago |
| fh4604d-hero.overlay.json | 14d ago |
| fh4604d.glb | 14d ago |
| fh4604d.kicad_mod | 14d ago |
| fh4604d.kicad_sym | 14d ago |
| fh4604d.lbr | 14d ago |
| fh4604d.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
FH4604D
XIN FEI HONG · MOSFETs · TO-252-4L
FH4604D from XIN FEI HONG, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 40V, ID 25A at TC=25°C, VGS ±20V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20V max, VGS(th) 1.0 to 2.0V). |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS -40V, ID -21A at TC=25°C, VGS ±20V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS ±20V max, VGS(th) -1.0 to -2.0V). |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, joined as in the H-bridge half-bridge schematic and used for heat dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Channel Drain-Source Breakdown Voltage | BVDSS | 40 | 45 | V | VGS=0V ID=250μA | 2 | |
| N-Channel Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| N-Channel Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| N-Channel Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| N-Channel Drain-Source On-State Resistance | RDS(ON) | 14 | 19 | mΩ | VGS=10V, ID=6A | 2 | |
| N-Channel Drain-Source On-State Resistance | RDS(ON) | 19 | 24 | mΩ | VGS=4.5V, ID=4A | 2 | |
| N-Channel Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=6A | 2 | ||
| N-Channel Diode Forward Current | IS | 20 | A | Note 2 | 2 | ||
| P-Channel Drain-Source Breakdown Voltage | BVDSS | -40 | -45 | V | VGS=0V ID=-250μA | 5 | |
| P-Channel Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 5 | ||
| P-Channel Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 5 | |
| P-Channel Gate Threshold Voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS,ID=-250μA | 5 |
| P-Channel Drain-Source On-State Resistance | RDS(ON) | 28 | 34 | mΩ | VGS=-10V, ID=-5A | 5 | |
| P-Channel Drain-Source On-State Resistance | RDS(ON) | 39 | 47 | mΩ | VGS=-4.5V, ID=-4A | 5 | |
| P-Channel Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-5 | 5 | ||
| P-Channel Diode Forward Current | IS | -15 | A | Note 2 | 5 | ||
| Drain-Source Voltage (N-Channel) | VDS | 40 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -40 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 25 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -21 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 13 | A | TC=100℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -11 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 75 | A | Note 1 | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -63 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 23 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 9 | ℃/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
FH4604D - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
fh4604d-etched.step/fh4604d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh4604d.step/fh4604d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (8 pp, sha256
b608a02892afae92, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).