component
FH365P
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XIN FEI HONG MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FH365P
XIN FEI HONG · MOSFETs · SOT-23-6
FH365P from XIN FEI HONG, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, internally common with pins 2, 5 and 6; VDS rated -40V and continuous ID -4.5A. |
| 2 | D | passive | Drain, internally common with pins 1, 5 and 6; VDS rated -40V and continuous ID -4.5A. |
| 3 | G | input | Gate; VGS maximum ±20V, threshold -1.1V to -1.9V at ID=-250μA. |
| 4 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage is at most -1.2V at IS=-1A. |
| 5 | D | passive | Drain, internally common with pins 1, 2 and 6; VDS rated -40V and continuous ID -4.5A. |
| 6 | D | passive | Drain, internally common with pins 1, 2 and 5; VDS rated -40V and continuous ID -4.5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -4.5 | A | 1 | |||
| Drain Current-Pulsed | IDM | -22 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.5 | -1.9 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 45 | 54 | mΩ | VGS=-10V, ID=-4.0A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 62 | 75 | mΩ | VGS=-4.5V, ID=-3.0A | 2 | |
| Input Capacitance | Clss | 660 | 820 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 | |
| Output Capacitance | Coss | 115 | 152 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 75 | 98 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A | 2 |
CAD (KiCad official)
- Symbol:
FH365P - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fh365p-etched.step/fh365p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh365p.step/fh365p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (6 pp, sha256
8625be8cca10818c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FH365P
**XIN FEI HONG** · MOSFETs · SOT-23-6
FH365P from XIN FEI HONG, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, internally common with pins 2, 5 and 6; VDS rated -40V and continuous ID -4.5A. |
| 2 | D | passive | Drain, internally common with pins 1, 5 and 6; VDS rated -40V and continuous ID -4.5A. |
| 3 | G | input | Gate; VGS maximum ±20V, threshold -1.1V to -1.9V at ID=-250μA. |
| 4 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage is at most -1.2V at IS=-1A. |
| 5 | D | passive | Drain, internally common with pins 1, 2 and 6; VDS rated -40V and continuous ID -4.5A. |
| 6 | D | passive | Drain, internally common with pins 1, 2 and 5; VDS rated -40V and continuous ID -4.5A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current-Continuous | ID | -4.5 | | | A | | 1 |
| Drain Current-Pulsed | IDM | -22 | | | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 125 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-40V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.5 | -1.9 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 45 | 54 | mΩ | VGS=-10V, ID=-4.0A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 62 | 75 | mΩ | VGS=-4.5V, ID=-3.0A | 2 |
| Input Capacitance | Clss | | 660 | 820 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss | | 115 | 152 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 75 | 98 | PF | VDS=-20V, VGS=0V, F=1.0MHz | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A | 2 |
## CAD (KiCad official)
- Symbol: `FH365P`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `fh365p-etched.step` / `fh365p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fh365p.step` / `fh365p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [XIN FEI HONG datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590394994298560512) (6 pp, sha256 `8625be8cca10818c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fh365p-datasheet.pdf)