component
FH3415Q
Public Made by Adomby adom
XIN FEI HONG MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 20d ago |
| viewers | 20d ago |
| fh3415q-etched.glb | 20d ago |
| fh3415q-etched.step | 20d ago |
| fh3415q-hero.glb | 20d ago |
| fh3415q-hero.overlay.json | 20d ago |
| fh3415q.glb | 20d ago |
| fh3415q.kicad_mod | 20d ago |
| fh3415q.kicad_sym | 20d ago |
| fh3415q.lbr | 20d ago |
| fh3415q.step | 20d ago |
| package.json | 20d ago |
| page.json | 20d ago |
| README.md | 20d ago |
FH3415Q
XIN FEI HONG · MOSFETs · SOT-23
FH3415Q from XIN FEI HONG, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with a typical threshold of -1.3 V (-1.0 to -1.6 V) at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; drain current is -3.0 A continuous at TA=25℃ and body-diode continuous current is -3.4 A. |
| 3 | D | passive | Drain; drain-source voltage is limited to -20 V, with drain current of -3.0 A continuous and -12.0 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | -3 | A | TA=25℃ | 1 | ||
| Drain Current | ID | -2.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | 1 | |||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 139 | ℃/ W | 1 | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-16V,VGS=0V,TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.3 | -1.6 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 45 | 64 | mΩ | VGS= -10V, ID=-3.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 83 | mΩ | VGS= -4.5V, ID=-2.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 55 | 70 | mΩ | VGS= -5.0V, ID=- 1A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-3.0A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -3.4 | A | 2 |
CAD (KiCad official)
- Symbol:
FH3415Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fh3415q-etched.step/fh3415q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh3415q.step/fh3415q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (5 pp, sha256
2ba83cb20676b4c1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).