component
FH3108D
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鑫飞宏 , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FH3108D
鑫飞宏 · IC · TO-252
FH3108D from 鑫飞宏, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, connected to the metal tab, with VDS rated at 85 V and continuous ID of 104 A. |
| 3 | S | passive | Source of the N-channel MOSFET, with a diode forward current of up to 104 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | 鑫飞宏 |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 104 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID(TC=100℃) | 68 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 270 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 130 | W | TC=25℃ | 1 | ||
| Avalanche Energy | EAS | 625 | mJ | L=0.5mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=80V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.4 | 3 | 3.8 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4.4 | 5 | 6 | mΩ | VGS=10V,ID=30A | 2 |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Diode Forward Current | IS | 104 | A | 2 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.2 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
FH3108D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fh3108d-etched.step/fh3108d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh3108d.step/fh3108d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: 鑫飞宏 datasheet (6 pp, sha256
b2299d7388bcf8ab, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FH3108D
**鑫飞宏** · IC · TO-252
FH3108D from 鑫飞宏, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, connected to the metal tab, with VDS rated at 85 V and continuous ID of 104 A. |
| 3 | S | passive | Source of the N-channel MOSFET, with a diode forward current of up to 104 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | 鑫飞宏 |
| Package | TO-252 |
| Category | |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 85 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Drain Current-Continuous | ID | | | 104 | A | TC=25℃ | 1 |
| Drain Current-Continuous (TC=100℃) | ID(TC=100℃) | | | 68 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 270 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 130 | W | TC=25℃ | 1 |
| Avalanche Energy | EAS | | | 625 | mJ | L=0.5mH | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 85 | | | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=80V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.4 | 3 | 3.8 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4.4 | 5 | 6 | mΩ | VGS=10V,ID=30A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=10A | 2 |
| Diode Forward Current | IS | | | 104 | A | | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | 1.2 | | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
## CAD (KiCad official)
- Symbol: `FH3108D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fh3108d-etched.step` / `fh3108d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fh3108d.step` / `fh3108d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [鑫飞宏 datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603345648272502784) (6 pp, sha256 `b2299d7388bcf8ab`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fh3108d-datasheet.pdf)