component
FH2300
Public Made by Adomby adom
鑫飞宏 , SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FH2300
鑫飞宏 · IC · SOT-23
FH2300 from 鑫飞宏, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±12 V and a threshold of 0.5 V min, 0.75 V typ and 1.2 V max at 250 uA. |
| 2 | SOURCE | passive | Source of the N-channel MOSFET, which carries a continuous drain current of up to 2.5 A. |
| 3 | DRAIN | passive | Drain of the N-channel MOSFET, with a drain-source voltage rating of 20 V and a continuous drain current of 2.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | 鑫飞宏 |
| Package | SOT-23 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current | ID | 2.5 | A | 1 | |||
| Power Dissipation | PD | 0.9 | W | TA=25℃ | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V,ID=250uA | 1 | ||
| Gate-Threshold Voltage | Vth(GS) | 0.5 | 0.75 | 1.2 | V | VDS= VGS, ID=250 uA | 1 |
| Gate-body Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±10V | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 1 | ||
| Drain-Source On-Resistance | rDS(ON) | 43 | 59 | mΩ | VGS=4.5V, ID=2.5A | 1 | |
| Drain-Source On-Resistance | rDS(ON) | 58 | 82 | mΩ | VGS=2.5V | 1 | |
| Diode Forward Current | Is | 2.5 | A | 1 | |||
| Forward Transconductance | gfs | 9.5 | S | VDS=5V, ID=2.9A | 1 | ||
| Input Capacitance | Ciss | 280 | pF | VDS=10V, VGS=0V, f=1MHz | 1 | ||
| Output Capacitance | Coss | 60 | pF | VDS=10V, VGS=0V, f=1MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS=10V, VGS=0V, f=1MHz | 1 | ||
| Turn-on Delay Time | td(on) | 6 | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 | ||
| Turn-on Rise Time | tr | 5 | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 | ||
| Turn-off Delay Time | td(off) | 9 | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 | ||
| Turn-off Fall Time | tf | 1.5 | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 | ||
| Total Gate Charge | Qg | 1.7 | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 | ||
| Gate-Source Charge | Qgs | 0.3 | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 | ||
| Gate-Drain Charge | Qgd | 0.8 | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=2.5A | 1 |
CAD (KiCad official)
- Symbol:
FH2300 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fh2300-etched.step/fh2300-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh2300.step/fh2300.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: 鑫飞宏 datasheet (3 pp, sha256
159642cebfc4e814, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FH2300
**鑫飞宏** · IC · SOT-23
FH2300 from 鑫飞宏, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±12 V and a threshold of 0.5 V min, 0.75 V typ and 1.2 V max at 250 uA. |
| 2 | SOURCE | passive | Source of the N-channel MOSFET, which carries a continuous drain current of up to 2.5 A. |
| 3 | DRAIN | passive | Drain of the N-channel MOSFET, with a drain-source voltage rating of 20 V and a continuous drain current of 2.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | 鑫飞宏 |
| Package | SOT-23 |
| Category | |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current | ID | | | 2.5 | A | | 1 |
| Power Dissipation | PD | | | 0.9 | W | TA=25℃ | 1 |
| Junction Temperature | Tj | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS=0V,ID=250uA | 1 |
| Gate-Threshold Voltage | Vth(GS) | 0.5 | 0.75 | 1.2 | V | VDS= VGS, ID=250 uA | 1 |
| Gate-body Leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±10V | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 1 |
| Drain-Source On-Resistance | rDS(ON) | | 43 | 59 | mΩ | VGS=4.5V, ID=2.5A | 1 |
| Drain-Source On-Resistance | rDS(ON) | | 58 | 82 | mΩ | VGS=2.5V | 1 |
| Diode Forward Current | Is | | | 2.5 | A | | 1 |
| Forward Transconductance | gfs | | 9.5 | | S | VDS=5V, ID=2.9A | 1 |
| Input Capacitance | Ciss | | 280 | | pF | VDS=10V, VGS=0V, f=1MHz | 1 |
| Output Capacitance | Coss | | 60 | | pF | VDS=10V, VGS=0V, f=1MHz | 1 |
| Reverse Transfer Capacitance | Crss | | 40 | | pF | VDS=10V, VGS=0V, f=1MHz | 1 |
| Turn-on Delay Time | td(on) | | 6 | | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 |
| Turn-on Rise Time | tr | | 5 | | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 |
| Turn-off Delay Time | td(off) | | 9 | | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 |
| Turn-off Fall Time | tf | | 1.5 | | nS | VDD=10V, ID=2.5A, VGS=4.5V, RGEN=2.8Ω | 1 |
| Total Gate Charge | Qg | | 1.7 | | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 |
| Gate-Source Charge | Qgs | | 0.3 | | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 |
| Gate-Drain Charge | Qgd | | 0.8 | | nC | VDS=10V, ID=2.5A, VGS=4.5V | 1 |
| Diode Forward Voltage | VSD | | 1.2 | | V | VGS=0V, IS=2.5A | 1 |
## CAD (KiCad official)
- Symbol: `FH2300`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fh2300-etched.step` / `fh2300-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fh2300.step` / `fh2300.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [鑫飞宏 datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603387196498067456) (3 pp, sha256 `159642cebfc4e814`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fh2300-datasheet.pdf)