component
FH2050D
Public Made by Adomby adom
XIN FEI HONG MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| fh2050d-etched.glb | 9d ago |
| fh2050d-etched.step | 9d ago |
| fh2050d-hero.glb | 9d ago |
| fh2050d-hero.overlay.json | 9d ago |
| fh2050d.glb | 9d ago |
| fh2050d.kicad_mod | 9d ago |
| fh2050d.kicad_sym | 9d ago |
| fh2050d.lbr | 9d ago |
| fh2050d.step | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
FH2050D
XIN FEI HONG · MOSFETs · TO-252
FH2050D from XIN FEI HONG, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V, with VGS(th) of 0.5 V min to 1.0 V max at ID=250μA. |
| 2 | D | passive | Drain (also the package tab); VDS rated 20 V, continuous ID 50 A at TC=25℃ and pulsed IDM 150 A. |
| 3 | S | passive | Source; diode forward current IS up to 50 A, with RDS(ON) below 7 mΩ at VGS=4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | 50 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 38 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Maximum Power Dissipation | PD | 50 | W | 1 | |||
| Single pulse avalanche energy | EAS | 100 | mJ | Note 5: Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.1 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=16V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | uA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 5.8 | 7 | mΩ | VGS=4.5V, ID=20 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 7.6 | 9 | mΩ | VGS=2.5V, ID=15A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Current | IS | 50 | A | 2 |
CAD (KiCad official)
- Symbol:
FH2050D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fh2050d-etched.step/fh2050d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh2050d.step/fh2050d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (6 pp, sha256
e3d913cfa7690246, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).