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FH1908B

Public Made by Adom

by adom

XIN FEI HONG MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FH1908B

XIN FEI HONG · MOSFETs · TO-263

FH1908B from XIN FEI HONG, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V.
2 D passive Drain (center pin, shown shortened, and connected to the tab); VDS is 80 V and continuous ID is 85 A.
3 S passive Source; continuous diode forward current IS is 85 A.

Key specifications

Parameter Value
Manufacturer XIN FEI HONG
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 85 A TA=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 62 A TC=100℃ 1
Pulsed Drain Current IDM 340 A 1
Maximum Power Dissipation PD 175 W TA=25℃ 1
Peak diode recovery voltage dv/dt dv/dt 15 V/ns 1
Derating factor 1.13 W/℃ 1
Single pulse avalanche energy EAS 580 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH, ID=62A 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 6.2 7.8 mΩ VGS=10V, ID=30A 2
Forward Transconductance gFS 60 S VDS=5V,ID=30A 2
Input Capacitance CIss 4030 PF VDS=25V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 348 PF VDS=25V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 290 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 17.8 nS VDD=30V,ID=2A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-on Rise Time tr 11.8 nS VDD=30V,ID=2A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Delay Time td(off) 56 nS VDD=30V,ID=2A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Turn-Off Fall Time tf 14.6 nS VDD=30V,ID=2A,RL=15Ω,VGS=10V,RG=2.5Ω 2
Total Gate Charge Qg 100 nC VDS=30V,ID=30A, VGS=10V 2
Gate-Source Charge Qgs 20 nC VDS=30V,ID=30A, VGS=10V 2
Gate-Drain Charge Qgd 30 nC VDS=30V,ID=30A, VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=40A 2
Diode Forward Current IS 85 A 2
Reverse Recovery Time trr 36 nS Tj=25℃,ISD=40A,VGS=0V 2
Reverse Recovery Charge Qrr 56 nC Tj=25℃,IF=75A,di/dt=100A/μs 2
Thermal Resistance, Junction-to-Case RθJc 0.88 ℃/W Note 2 2

CAD (KiCad official)

  • Symbol: FH1908B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: fh1908b-etched.step / fh1908b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh1908b.step / fh1908b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XIN FEI HONG datasheet (6 pp, sha256 472ab7eacf9c14e9, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF