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FH1204S

Public Made by Adom

by adom

鑫飞宏 , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FH1204S

鑫飞宏 · IC · SOP-8

FH1204S from 鑫飞宏, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied to pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied to pins 1 and 2.
4 G input Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V.
5 D passive Drain of the N-channel MOSFET, tied to pins 6, 7 and 8, with a 40 V drain-source rating and 20 A drain current.
6 D passive Drain of the N-channel MOSFET, tied to pins 5, 7 and 8, with a 40 V drain-source rating and 20 A drain current.
7 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 8, with a 40 V drain-source rating and 20 A drain current.
8 D passive Drain of the N-channel MOSFET, tied to pins 5, 6 and 7, with a 40 V drain-source rating and 20 A drain current.

Key specifications

Parameter Value
Manufacturer 鑫飞宏
Package SOP-8
Category
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1.2 2.2 V VDS = VGS, IDS = 250 μA 2
Gate Leakage Current IGSS -100 100 nA VGS = ±20 V, VDS = 0 V 2
Zero Gate Voltage Source Current IDSS 1 μA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Source Current IDSS 30 μA TJ = 85 ℃ 2
Drain-Source On-State Resistance RDS(ON) 7 9 mΩ VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(ON) 9 13 mΩ VGS = 4.5 V, ID = 6 A 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0 V, ID = 250 μA 2
Diode Forward Voltage VSD 1.3 V ISD = 10 A, VGS = 0 V 2
Drain-Source Voltage VDS 40 V TC = 25 ℃ 1
Gate-Source Voltage VGS -20 20 V TC = 25 ℃ 1
Drain Current ID 20 A TC = 25 ℃, VGS = 10 V 1
Pulsed Source Current IDM 80 A TC = 25 ℃, VGS = 10 V 1
Total Power Dissipation Ptot 2.8 W TC = 25 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Junction Temperature TJ 150 ℃ 1
Diode Forward Current IS 20 A TC = 25 ℃ 1
Single Pulsed Avalanche Energy EAS 40 mJ VDD = 40 V, L = 0.5 mH 1
Thermal Resistance Junction to Ambient RθJA 64 ℃/W Surface mounted on 1 in2 pad area, t ≤ 10 sec 1
Thermal Resistance Junction to Case RθJC 8.5 ℃/W 1

CAD (KiCad official)

  • Symbol: FH1204S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fh1204s-etched.step / fh1204s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fh1204s.step / fh1204s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: 鑫飞宏 datasheet (6 pp, sha256 436685fd90a129ba, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF