# FGY100T120RWD

**onsemi** · IGBTs · TO-247-3

FGY100T120RWD from onsemi, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, the control terminal of the IGBT, rated for ±20 V gate-to-emitter (±30 V transient). |
| 2 | C | passive | Collector, also the co-packed diode cathode, rated for 1200 V collector-to-emitter and 100 A at TC = 100°C. |
| 3 | E | passive | Emitter, also the co-packed diode anode, carrying up to 100 A at TC = 100°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-to-Emitter Voltage | VCES |  |  | 1200 | V |  | 1 |
| Gate-to-Emitter Voltage | VGES | -20 |  | 20 | V |  | 1 |
| Transient Gate-to-Emitter Voltage |  | -30 |  | 30 | V |  | 1 |
| Collector Current | IC |  |  | 200 | A | TC = 25°C | 1 |
| Collector Current | IC |  |  | 100 | A | TC = 100°C | 1 |
| Power Dissipation | PD |  |  | 1071 | W | TC = 25°C | 1 |
| Power Dissipation | PD |  |  | 535 | W | TC = 100°C | 1 |
| Pulsed Collector Current | ICM |  |  | 300 | A | TC = 25°C, tp = 10 s (Note 1) | 1 |
| Diode Forward Current | IF |  |  | 200 | A | TC = 25°C | 1 |
| Diode Forward Current | IF |  |  | 100 | A | TC = 100°C | 1 |
| Pulsed Diode Forward Current | IFM |  |  | 300 | A | TC = 25°C, tp = 10 s (Note 1) | 1 |
| Short Circuit Withstand Time | TSC |  |  | 5 | s | VGE = 15 V, VCC = 600 V, TC = 150°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Lead Temperature for Soldering Purposes | TL |  |  | 260 |  |  | 1 |
| Thermal Resistance, Junction-to-Case for IGBT | RJC |  |  | 0.14 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Case for Diode | RJC |  |  | 0.23 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RJA |  |  | 40 | °C/W |  | 2 |
| Collector-to-Emitter Breakdown Voltage | BVCES | 1200 |  |  | V | VGE = 0 V, IC = 5 mA | 2 |
| Collector-to-Emitter Cut-Off Current | ICES |  |  | 40 | A | VGE = 0 V, VCE = VCES | 2 |
| Gate-to-Emitter Leakage Current | IGES | -400 |  | 400 | nA | VGE = 20 V, VCE = 0 V | 2 |
| Gate-to-Emitter Threshold Voltage | VGE(TH) | 4.9 | 5.92 | 6.7 | V | VGE = VCE, IC = 100 mA | 2 |
| Collector-to-Emitter Saturation Voltage | VCE(SAT) | 1.15 | 1.43 | 1.75 | V | VGE = 15 V, IC = 100 A, TJ = 25°C | 2 |
| Diode Forward Voltage | VF | 1.46 | 1.8 | 2.08 | V | IF = 100 A, TJ = 25°C | 3 |

## CAD (KiCad official)

- Symbol: `FGY100T120RWD`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `fgy100t120rwd-etched.step` / `fgy100t120rwd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fgy100t120rwd.step` / `fgy100t120rwd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fgy100t120rw-d.pdf) (9 pp, sha256 `66924e43acb83a0d`, retrieved 2026-11-04, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fgy100t120rwd-datasheet.pdf)