component
FGL60N100BNTDTU
Public Made by Adomby adom
onsemi IGBT Transistors / Modules, TO-264-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# FGL60N100BNTDTU++**onsemi** · IGBT Transistors / Modules · TO-264-3++FGL60N100BNTDTU from onsemi, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | Gate | input | Gate control terminal; Gate-to-Emitter voltage rated to 25 V maximum with threshold voltage of 5.0 V typical. |+| 2 | Collector | passive | Collector main power terminal; rated for 1000 V collector-emitter voltage with 60 A continuous collector current at 25°C case temperature. |+| 3 | Emitter | passive | Emitter main power terminal and gate return; includes built-in fast recovery diode with forward current rating of 15 A at 100°C. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | onsemi |+| Package | TO-264-3 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `FGL60N100BNTDTU`+- Footprint: `Package_TO_SOT_THT:TO-264-3_Vertical`+- 3D model: TO-264-3 (KiCad packages3D, STEP)+- 3D model files: `fgl60n100bntdtu-etched.step` / `fgl60n100bntdtu-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fgl60n100bntdtu.step` / `fgl60n100bntdtu.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887377330769920) (9 pp, sha256 `f359f1e46617083b`, retrieved 2026-09-22, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/fgl60n100bntdtu-datasheet.pdf)
page.jsonadded+111@@ -0,0 +1,111 @@+{+ "slug": "fgl60n100bntdtu",+ "version": "0.1.0",+ "type": "component",+ "description": "onsemi IGBT Transistors / Modules, TO-264-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "fgl60n100bntdtu",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "fgl60n100bntdtu.kicad_sym",+ "fgl60n100bntdtu.kicad_mod",+ "fgl60n100bntdtu.glb",+ "fgl60n100bntdtu.step",+ "fgl60n100bntdtu.lbr",+ "docs/hero.png",+ "docs/fgl60n100bntdtu-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "FGL60N100BNTDTU",+ "manufacturer": "onsemi",+ "package": "TO-264-3",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "IGBT Transistors / Modules",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887377330769920",+ "parts": {+ "symbol": "fgl60n100bntdtu.kicad_sym",+ "footprint": "fgl60n100bntdtu.kicad_mod",+ "model_3d": "fgl60n100bntdtu-etched.glb",+ "model_3d_plain": "fgl60n100bntdtu.glb",+ "model_3d_step": "fgl60n100bntdtu-etched.step",+ "model_3d_step_plain": "fgl60n100bntdtu.step",+ "lbr": "fgl60n100bntdtu.lbr"+ },+ "distributor_links": {+ "lcsc": "C105610"+ },+ "pins": [+ {+ "number": "1",+ "name": "Gate",+ "type": "input",+ "description": "Gate control terminal; Gate-to-Emitter voltage rated to 25 V maximum with threshold voltage of 5.0 V typical."+ },+ {+ "number": "2",+ "name": "Collector",+ "type": "passive",+ "description": "Collector main power terminal; rated for 1000 V collector-emitter voltage with 60 A continuous collector current at 25°C case temperature."+ },+ {+ "number": "3",+ "name": "Emitter",+ "type": "passive",+ "description": "Emitter main power terminal and gate return; includes built-in fast recovery diode with forward current rating of 15 A at 100°C."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-4-6",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [],+ "pages_sent": 9,+ "cost_usd": 0.1644,+ "at": "2026-09-22T03:52:43"+ },+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887377330769920",+ "pages": 9,+ "sha256": "f359f1e46617083b",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}