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FGA40N65SMD

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onsemi IGBT Transistors / Modules, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfga40n65smdfactory-2.0.0extractor-text

Verified FGA40N65SMD

by Ray · last 6 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

6 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FGA40N65SMD · TO-3P · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-3P-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-p27720y4/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fga40n65smd.kicad_sym✓ fga40n65smd.kicad_mod✓ fga40n65smd.step
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FGA40N65SMD

onsemi · IGBT Transistors / Modules · TO-3P

FGA40N65SMD from onsemi, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated ±20 V continuous and ±30 V transient, with a typical threshold VGE(th) of 4.5 V at IC = 250 µA.
2 C passive Collector (also the mounting tab); collector-emitter voltage is rated 650 V and collector current is 80 A at TC = 25°C and 40 A at TC = 100°C.
3 E passive Emitter; the anti-parallel diode carries 40 A forward current at TC = 25°C and 20 A at TC = 100°C.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-3P
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCES 650 V 2
Gate-emitter voltage VGES -20 20 V 2
Transient gate-emitter voltage VGES -30 30 V transient 2
Collector current IC 80 A TC = 25°C 2
Collector current IC 40 A TC = 100°C 2
Pulsed collector current ICM 120 A Repetitive rating: pulse width limited by max junction temperature 2
Diode forward current IF 40 A TC = 25°C 2
Diode forward current IF 20 A TC = 100°C 2
Diode maximum forward pulsed current IFM 120 A Repetitive rating: pulse width limited by max junction temperature 2
Maximum power dissipation PD 349 W TC = 25°C 2
Maximum power dissipation PD 174 W TC = 100°C 2
Operating junction temperature TJ -55 175 °C 2
Storage temperature range Tstg -55 175 °C 2
Maximum lead temperature for soldering TL 300 °C 1/8 inch from case, 5 seconds 2
Thermal resistance, junction to case (IGBT) RθJC(IGBT) 0.43 °C/W 3
Thermal resistance, junction to case (diode) RθJC(Diode) 1.5 °C/W 3
Thermal resistance, junction to ambient RθJA 40 °C/W 3
Collector-emitter breakdown voltage BVCES 650 V VGE = 0 V, IC = 250 μA 3
Collector cut-off current ICES 250 μA VCE = VCES, VGE = 0 V 3
G-E leakage current IGES -400 400 nA VGE = VGES, VCE = 0 V 3
G-E threshold voltage VGE(th) 3.5 4.5 6 V IC = 250 μA, VCE = VGE 3
Collector-emitter saturation voltage VCE(sat) 1.9 2.5 V IC = 40 A, VGE = 15 V 3
Gate charge, total Qg 119 180 nC VCE = 400 V, IC = 40 A, VGE = 15 V 4
Gate-emitter charge Qge 13 20 nC VCE = 400 V, IC = 40 A, VGE = 15 V 4
Gate-collector charge Qgc 58 90 nC VCE = 400 V, IC = 40 A, VGE = 15 V 4
Turn-on delay time td(on) 12 16 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Rise time tr 20 28 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Turn-off delay time td(off) 92 120 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Fall time tf 13 17 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Turn-on switching loss Eon 0.82 1.23 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Turn-off switching loss Eoff 0.26 0.34 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Total switching loss Ets 1.08 1.57 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 25°C 3
Diode forward voltage VFM 2.1 2.6 V IF = 20 A, TC = 25°C 4
Collector-emitter saturation voltage VCE(sat) 2.1 V IC = 40 A, VGE = 15 V, TC = 175°C 3
Temperature coefficient of breakdown voltage ΔBVCES/ΔTJ 0.6 V/°C VGE = 0 V, IC = 250 μA 3
Input capacitance Cies 1880 pF VCE = 30 V, VGE = 0 V, f = 1 MHz 3
Output capacitance Coes 180 pF VCE = 30 V, VGE = 0 V, f = 1 MHz 3
Reverse transfer capacitance Cres 50 pF VCE = 30 V, VGE = 0 V, f = 1 MHz 3
Turn-on delay time td(on) 15 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Rise time tr 22 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Turn-off delay time td(off) 116 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Fall time tf 16 ns VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Turn-on switching loss Eon 1.08 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Turn-off switching loss Eoff 0.6 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Total switching loss Ets 1.68 mJ VCC = 400 V, IC = 40 A, RG = 6 Ω, VGE = 15 V, inductive load, TC = 175°C 3
Diode forward voltage VFM 1.7 V IF = 20 A, TC = 175°C 4
Diode reverse recovery energy Erec 96 µJ IF = 20 A, diF/dt = 200 A/μs, TC = 175°C 4
Diode reverse recovery time trr 42 ns TC = 25°C 4
Diode reverse recovery time trr 200 ns TC = 175°C 4
Diode reverse recovery peak current Irr 3.6 A TC = 25°C 4
Diode reverse recovery peak current Irr 8 A TC = 175°C 4
Diode reverse recovery charge Qrr 76 nC TC = 25°C 4
Diode reverse recovery charge Qrr 800 nC TC = 175°C 4

CAD (KiCad official)

  • Symbol: FGA40N65SMD
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: fga40n65smd-etched.step / fga40n65smd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fga40n65smd.step / fga40n65smd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 3d7037c8f7649b1b, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF