component
FFSP1065A
Public Made by Adomby adom
onsemi SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FFSP1065A
onsemi · SiC Diodes · TO-220-2
FFSP1065A from onsemi, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the 650 V, 10 A SiC Schottky diode (peak repetitive reverse voltage 650 V). |
| 2 | Anode | passive | Anode of the SiC Schottky diode; continuous forward current is 10 A at TC < 152°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | 1.5 | 1.75 | V | IF = 10 A, TC = 25°C | 2 | |
| Forward Voltage | VF | 1.6 | 2 | V | IF = 10 A, TC = 125°C | 2 | |
| Forward Voltage | VF | 1.72 | 2.4 | V | IF = 10 A, TC = 175°C | 2 | |
| Reverse Current | IR | 200 | µA | VR = 650 V, TC = 25°C | 2 | ||
| Reverse Current | IR | 400 | µA | VR = 650 V, TC = 125°C | 2 | ||
| Reverse Current | IR | 600 | µA | VR = 650 V, TC = 175°C | 2 | ||
| Peak Repetitive Reverse Voltage | VRRM | 650 | V | TC = 25°C | 2 | ||
| Single Pulse Avalanche Energy | EAS | 64 | mJ | TJ = 25°C start, L = 0.5 mH, IAS = 16 A, V = 50 V | 2 | ||
| Continuous Rectified Forward Current | IF | 10 | A | TC < 152°C | 2 | ||
| Continuous Rectified Forward Current | IF | 15 | A | TC < 135°C | 2 | ||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 760 | A | TC = 25°C, 10 s | 2 | ||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 740 | A | TC = 150°C, 10 s | 2 | ||
| Non-Repetitive Forward Surge Current | IF,SM | 56 | A | Half-Sine Pulse, tp = 8.3 ms | 2 | ||
| Repetitive Forward Surge Current | IF,RM | 38 | A | Half-Sine Pulse, tp = 8.3 ms | 2 | ||
| Power Dissipation | PTOT | 111 | W | TC = 25°C | 2 | ||
| Power Dissipation | PTOT | 19 | W | TC = 150°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.35 | °C/W | Max | 2 | ||
| Total Capacitive Charge | QC | 34 | nC | V = 400 V | 2 | ||
| Total Capacitance | C | 575 | pF | VR = 1 V, f = 100 kHz | 2 | ||
| Total Capacitance | C | 62 | pF | VR = 200 V, f = 100 kHz | 2 | ||
| Total Capacitance | C | 47 | pF | VR = 400 V, f = 100 kHz | 2 |
CAD (KiCad official)
- Symbol:
FFSP1065A - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
ffsp1065a-etched.step/ffsp1065a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ffsp1065a.step/ffsp1065a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
bcafe492f2b38eb0, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FFSP1065A
**onsemi** · SiC Diodes · TO-220-2
FFSP1065A from onsemi, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the 650 V, 10 A SiC Schottky diode (peak repetitive reverse voltage 650 V). |
| 2 | Anode | passive | Anode of the SiC Schottky diode; continuous forward current is 10 A at TC < 152°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | | 1.5 | 1.75 | V | IF = 10 A, TC = 25°C | 2 |
| Forward Voltage | VF | | 1.6 | 2 | V | IF = 10 A, TC = 125°C | 2 |
| Forward Voltage | VF | | 1.72 | 2.4 | V | IF = 10 A, TC = 175°C | 2 |
| Reverse Current | IR | | | 200 | µA | VR = 650 V, TC = 25°C | 2 |
| Reverse Current | IR | | | 400 | µA | VR = 650 V, TC = 125°C | 2 |
| Reverse Current | IR | | | 600 | µA | VR = 650 V, TC = 175°C | 2 |
| Peak Repetitive Reverse Voltage | VRRM | | | 650 | V | TC = 25°C | 2 |
| Single Pulse Avalanche Energy | EAS | | | 64 | mJ | TJ = 25°C start, L = 0.5 mH, IAS = 16 A, V = 50 V | 2 |
| Continuous Rectified Forward Current | IF | | | 10 | A | TC < 152°C | 2 |
| Continuous Rectified Forward Current | IF | | | 15 | A | TC < 135°C | 2 |
| Non-Repetitive Peak Forward Surge Current | IF,Max | | | 760 | A | TC = 25°C, 10 s | 2 |
| Non-Repetitive Peak Forward Surge Current | IF,Max | | | 740 | A | TC = 150°C, 10 s | 2 |
| Non-Repetitive Forward Surge Current | IF,SM | | | 56 | A | Half-Sine Pulse, tp = 8.3 ms | 2 |
| Repetitive Forward Surge Current | IF,RM | | | 38 | A | Half-Sine Pulse, tp = 8.3 ms | 2 |
| Power Dissipation | PTOT | | | 111 | W | TC = 25°C | 2 |
| Power Dissipation | PTOT | | | 19 | W | TC = 150°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 2 |
| Thermal Resistance, Junction to Case | RθJC | | | 1.35 | °C/W | Max | 2 |
| Total Capacitive Charge | QC | | 34 | | nC | V = 400 V | 2 |
| Total Capacitance | C | | 575 | | pF | VR = 1 V, f = 100 kHz | 2 |
| Total Capacitance | C | | 62 | | pF | VR = 200 V, f = 100 kHz | 2 |
| Total Capacitance | C | | 47 | | pF | VR = 400 V, f = 100 kHz | 2 |
## CAD (KiCad official)
- Symbol: `FFSP1065A`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `ffsp1065a-etched.step` / `ffsp1065a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ffsp1065a.step` / `ffsp1065a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/ffsp1065a-d.pdf) (6 pp, sha256 `bcafe492f2b38eb0`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ffsp1065a-datasheet.pdf)