component
FDS9435A
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
fds9435a: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+496−1
README.md+44@@ -26,6 +26,50 @@ FDS9435A from onsemi, in a SO-8. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain–Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0 V, ID = –250 μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = –24 V, VGS = 0 V | 2 |+| Gate–Body Leakage, Forward | IGSSF | | | 100 | nA | VGS = 25 V, VDS = 0 V | 2 |+| Gate–Body Leakage, Reverse | IGSSR | -100 | | | nA | VGS = –25 V VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS = VGS, ID = –250 μA | 2 |+| Static Drain–Source On–Resistance | RDS(on) | | 42 | 50 | mΩ | VGS = –10 V, ID = –5.3 A | 2 |+| Static Drain–Source On–Resistance | RDS(on) | | 65 | 80 | mΩ | VGS = –4.5 V, ID = –4 A | 2 |+| Static Drain–Source On–Resistance | RDS(on) | | 57 | 77 | mΩ | VGS= –10 V, ID = –5.3 A, TJ=125°C | 2 |+| On–State Drain Current | ID(on) | -25 | | | A | VGS = –10 V, VDS = –5 V | 2 |+| Maximum Continuous Drain–Source Diode Forward Current | IS | | | -2.1 | A | | 2 |+| Drain–Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS = 0 V, IS = –2.1 A (Note 2) | 2 |+| Turn–On Delay Time | td(on) | | 7 | 14 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 2 |+| Turn–On Rise Time | tr | | 13 | 24 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 2 |+| Turn–Off Delay Time | td(off) | | 14 | 25 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 2 |+| Turn–Off Fall Time | tf | | 9 | 17 | ns | VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω | 2 |+| Total Gate Charge | Qg | | 10 | 14 | nC | VDS = –15 V, ID = –4 A, VGS = –10 V | 2 |+| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | -23 | | mV/°C | ID = –250 μA, Referenced to 25°C | 2 |+| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | | 4.5 | | mV/°C | ID = –250 μA, Referenced to 25°C | 2 |+| Forward Transconductance | gFS | | 10 | | S | VDS = –5 V, ID = –5.3 A | 2 |+| Input Capacitance | Ciss | | 528 | | pF | | 2 |+| Output Capacitance | Coss | | 132 | | pF | | 2 |+| Reverse Transfer Capacitance | Crss | | 70 | | pF | VDS = –15 V, V GS = 0 V, f = 1.0 MHz | 2 |+| Gate–Source Charge | Qgs | | 2.2 | | nC | VDS = –15 V, ID = –4 A, VGS = –10 V | 2 |+| Gate–Drain Charge | Qgd | | 2 | | nC | VDS = –15 V, ID = –4 A, VGS = –10 V | 2 |+| Drain–Source Voltage | VDSS | -30 | | | V | | 1 |+| Gate–Source Voltage | VGSS | -25 | | 25 | V | | 1 |+| Drain Current – Continuous | ID | -5.3 | | | A | Note 1a | 1 |+| Drain Current – Pulsed | ID | -50 | | | A | | 1 |+| Power Dissipation for Single Operation | PD | | | 2.5 | W | Note 1a | 1 |+| Power Dissipation for Single Operation | PD | | | 1.2 | W | Note 1b | 1 |+| Power Dissipation for Single Operation | PD | | | 1 | W | Note 1c | 1 |+| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |+| Gate Drive Voltage Rating | VGS | 4.5 | | 25 | V | Wide gate drive voltage rating stated in General Description | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 50 | | °C/W | Note 1a | 1 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 105 | | °C/W | Note 1b | 2 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 125 | | °C/W | Note 1c | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | 25 | | °C/W | Note 1 | 1 |+ ## CAD (KiCad official) - Symbol: `FDS9435A`
page.json+452−1@@ -180,6 +180,457 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "003cc13e4743d4af",+ "rows": [+ {+ "name": "Drain–Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = –250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = –24 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 25 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS = –25 V VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.7,+ "max": -3,+ "conditions": "VDS = VGS, ID = –250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 42,+ "max": 50,+ "conditions": "VGS = –10 V, ID = –5.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 65,+ "max": 80,+ "conditions": "VGS = –4.5 V, ID = –4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 57,+ "max": 77,+ "conditions": "VGS= –10 V, ID = –5.3 A, TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On–State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -25,+ "typ": null,+ "max": null,+ "conditions": "VGS = –10 V, VDS = –5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain–Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = –2.1 A (Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": 14,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–On Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 24,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 14,+ "max": 25,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–Off Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 17,+ "conditions": "VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": 14,+ "conditions": "VDS = –15 V, ID = –4 A, VGS = –10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -23,+ "max": null,+ "conditions": "ID = –250 μA, Referenced to 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage Temperature Coefficient",+ "symbol": "ΔVGS(th)/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 4.5,+ "max": null,+ "conditions": "ID = –250 μA, Referenced to 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDS = –5 V, ID = –5.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 528,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 132,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 70,+ "max": null,+ "conditions": "VDS = –15 V, V GS = 0 V, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "VDS = –15 V, ID = –4 A, VGS = –10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2,+ "max": null,+ "conditions": "VDS = –15 V, ID = –4 A, VGS = –10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate–Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.3,+ "typ": null,+ "max": null,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Pulsed",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -50,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Note 1b",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation for Single Operation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Note 1c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate Drive Voltage Rating",+ "symbol": "VGS",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 4.5,+ "typ": null,+ "max": 25,+ "conditions": "Wide gate drive voltage rating stated in General Description",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "Note 1a",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 105,+ "max": null,+ "conditions": "Note 1b",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "Note 1c",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 25,+ "max": null,+ "conditions": "Note 1",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +672,4 @@ "visibility": { "public": true }-}+}