# FDS8884

**UMW** · MOSFETs · SOP-8

FDS8884 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 2 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 3 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 4 | G | input | Gate terminal; gate-to-source voltage is rated at ±20 V (VGS), with the gate threshold VGS(th) of 1.2 to 2.5 V. |
| 5 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 6 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 7 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 8 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=24V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (second max value) | IDSS |  |  | 250 | µA | VDS=24V, VGS=0V | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V | 3 |
| Drain to Source On Resistance | RDS(ON) |  | 19 | 23 | mΩ | VGS=10V, ID=8.5A | 3 |
| Drain to Source On Resistance | RDS(ON) |  | 26 | 30 | mΩ | VGS=4.5V, ID=7.5A | 3 |
| Drain to Source On Resistance | RDS(ON) |  |  | 32 | mΩ | VGS=10V,ID=8.5A,TJ=125°C | 3 |
| Input Capacitance | Ciss |  | 475 | 635 | pF | VDS=15V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss |  | 100 | 135 | pF | VDS=15V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 65 | 100 | pF | VDS=15V, VGS=0V, f=1MHz | 3 |
| Gate Resistance | RG |  | 0.9 | 1.6 | Ω | f=1MHz | 3 |
| Turn-On Delay Time | tD(on) |  | 5 | 10 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 |
| Rise Time | tr |  | 9 | 18 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 42 | 68 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 |
| Fall Time | tf |  | 21 | 34 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 |
| Total Gate Charge | Qg |  | 9.2 | 13 | nC | VDS=15V,ID=8.5A,VGS=10V | 3 |
| Total Gate Charge | Qg |  | 5 | 7 | nC | VDS=15V, ID=8.5A, VGS=5V | 3 |
| Gate to Source Gate Charge | Qgs |  | 1.5 |  | nC |  | 3 |
| Gate to Drain Charge | Qgd |  | 2 |  | nC |  | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 23 |  | mV/°C | ID=250µA, Referenced to 25°C | 3 |
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ |  | -4.9 |  | mV/°C | ID=250µA, Referenced to 25°C | 3 |
| Reverse Recovery Time | trr |  | 33 |  | nS | IF=8.5A, dIF/dt=100A/μs | 4 |
| Reverse Recovery Charge | Qrr |  | 20 |  | nC | IF=8.5A, dIF/dt=100A/μs | 4 |
| Drain to Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 8.5 | A |  | 1 |
| Drain Current Pulsed | IDM |  |  | 40 | A | Note 1a | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 32 | mJ | Note 2: Starting TJ=25°C, L=1mH, IAS=8A, VDD=27V, VGS=10V | 1 |
| Power Dissipation | PD |  |  | 2.5 | W |  | 1 |
| Power Dissipation Derate above 25°C | PD derate |  |  | 20 | °C/W | Above 25°C | 1 |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 50 | °C/W | Note 1a: 1 in² pad of 2 oz copper | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 25 | °C/W | Note 1 | 2 |

## CAD (KiCad official)

- Symbol: `FDS8884`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fds8884-etched.step` / `fds8884-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds8884.step` / `fds8884.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755876049996013568) (10 pp, sha256 `9427bf3c039cf4b6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds8884-datasheet.pdf)