component
FDS8858CZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"slug": "fds8858cz",
"version": "0.1.0",
"type": "component",
"description": "onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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"fds8858cz.lbr",
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"component": {
"mpn": "FDS8858CZ",
"manufacturer": "onsemi",
"package": "SO-8",
"pin_count": 8,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588920799470768128",
"parts": {
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"lbr": "fds8858cz.lbr"
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"distributor_links": {
"lcsc": "C236908",
"digikey": "FDS8858CZTR-ND",
"mouser": "512-FDS8858CZ"
},
"distributor_check": {
"checked_at": "2026-10-18T07:09:03Z",
"source": "Component Ocean /api/assign-pns",
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"pn": "FDS8858CZTR-ND",
"status": "found",
"lifecycle": "Active"
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"pins": [
{
"number": "1",
"name": "S1",
"type": "passive",
"description": "Source terminal of the Q1 N-channel MOSFET; Q1 is rated VDS 30 V, VGS ±20 V, and 8.6 A continuous drain current at TA = 25°C."
},
{
"number": "2",
"name": "G1",
"type": "input",
"description": "Gate terminal of the Q1 N-channel MOSFET; the datasheet specifies VGS of ±20 V maximum for Q1."
},
{
"number": "3",
"name": "S2",
"type": "passive",
"description": "Source terminal of the Q2 P-channel MOSFET; Q2 is rated VDS -30 V, VGS ±25 V, and -7.3 A continuous drain current at TA = 25°C."
},
{
"number": "4",
"name": "G2",
"type": "input",
"description": "Gate terminal of the Q2 P-channel MOSFET; the datasheet specifies VGS of ±25 V maximum for Q2."
},
{
"number": "5",
"name": "D2",
"type": "passive",
"description": "Drain terminal of the Q2 P-channel MOSFET; Q2 drain is rated -30 V to source."
},
{
"number": "6",
"name": "D2",
"type": "passive",
"description": "Drain terminal of the Q2 P-channel MOSFET (second drain pin, internally common with pin 5); Q2 drain is rated -30 V to source."
},
{
"number": "7",
"name": "D1",
"type": "passive",
"description": "Drain terminal of the Q1 N-channel MOSFET; Q1 drain is rated 30 V to source."
},
{
"number": "8",
"name": "D1",
"type": "passive",
"description": "Drain terminal of the Q1 N-channel MOSFET (second drain pin, internally common with pin 7); Q1 drain is rated 30 V to source."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The SO-8 pin diagram on page 2 is garbled in the extracted text. The pin-to-function mapping (1=S1, ; The datasheet lists only one package (SO-8, 2500 units on 13in reel), so no other package variant wa; Pin types are assigned by KiCad ERC convention (gates as input, drain/source as passive) because the"
],
"pages_sent": 11,
"cost_usd": 0.0204,
"at": "2026-10-18T07:04:28"
},
"datasheet": {
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"pages": 11,
"sha256": "914e27009925692c",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 8,
"described": 8,
"cites_pages": true,
"refuses_to_fabricate": true
}
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"checked": "2026-10-18",
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}