component

FDS86240

Public Made by Adom

by adom

onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfds86240factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers fds86240: viewers · Ray 16d ago
fds86240-etched.glb Publish 0.1.0 · Ray 16d ago
fds86240-etched.step fds86240: factory component page (tier=lcsc) · Ray 16d ago
fds86240-hero.glb fds86240: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
fds86240-hero.overlay.json Publish 0.1.0 · Ray 16d ago
fds86240.glb Publish 0.1.0 · Ray 16d ago
fds86240.kicad_mod Publish 0.1.0 · Ray 16d ago
fds86240.kicad_sym Publish 0.1.0 · Ray 16d ago
fds86240.lbr Publish 0.1.0 · Ray 16d ago
fds86240.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

FDS86240

onsemi · MOSFETs · SO-8

FDS86240 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 150 V N-channel MOSFET, rated for continuous drain current of 7.5 A (VGS = 10 V).
2 S passive Source terminal of the 150 V N-channel MOSFET, rated for continuous drain current of 7.5 A (VGS = 10 V).
3 S passive Source terminal of the 150 V N-channel MOSFET, rated for continuous drain current of 7.5 A (VGS = 10 V).
4 G input Gate terminal; gate-to-source voltage is rated at ±20 V.
5 D passive Drain terminal; drain-to-source voltage is rated at 150 V.
6 D passive Drain terminal; drain-to-source voltage is rated at 150 V.
7 D passive Drain terminal; drain-to-source voltage is rated at 150 V.
8 D passive Drain terminal; drain-to-source voltage is rated at 150 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 150 V 2
Gate to Source Voltage VGS -20 20 V 2
Drain Current - Continuous ID 7.5 A 2
Drain Current - Pulsed ID 199 A Note 4 2
Single Pulse Avalanche Energy EAS 220 mJ Note 3 2
Power Dissipation PD 5 W TC = 25 °C (Note 1) 2
Power Dissipation PD 2.5 W TA = 25 °C (Note 1a) 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Case RθJC 25 °C/W Note 1 2
Thermal Resistance, Junction to Ambient RθJA 50 °C/W Note 1a 2
Drain to Source Breakdown Voltage BVDSS 150 V ID = 250 μA, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 120 V, VGS = 0 V 3
Gate to Source Leakage Current IGSS 100 nA VGS = ±20 V, VDS = 0 V 3
Gate to Source Threshold Voltage VGS(th) 2 2.7 4 V VGS = VDS, ID = 250 μA 3
Static Drain to Source On Resistance rDS(on) 17.3 19.8 mΩ VGS = 10 V, ID = 7.5 A 3
Static Drain to Source On Resistance rDS(on) 19.7 26 mΩ VGS = 6 V, ID = 6.4 A 3
Static Drain to Source On Resistance rDS(on) 30.8 35.3 mΩ VGS = 10 V, ID = 7.5 A, TJ = 125 °C 3
Input Capacitance Ciss 1930 2570 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 3
Output Capacitance Coss 198 265 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 3
Reverse Transfer Capacitance Crss 8.3 15 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 3
Turn-On Delay Time td(on) 14 26 ns VDD = 75 V, ID = 7.5 A, VGS = 10 V, RGEN = 6 Ω 3
Rise Time tr 4.2 10 ns VDD = 75 V, ID = 7.5 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-Off Delay Time td(off) 24 39 ns VDD = 75 V, ID = 7.5 A, VGS = 10 V, RGEN = 6 Ω 3
Fall Time tf 4.9 10 ns VDD = 75 V, ID = 7.5 A, VGS = 10 V, RGEN = 6 Ω 3
Total Gate Charge Qg(TOT) 28 40 nC VGS = 0 V to 10 V, VDD = 75 V, ID = 7.5 A 3
Total Gate Charge Qg(TOT) 16 22 nC VGS = 0 V to 5 V 3
Source to Drain Diode Forward Voltage VSD 0.77 1.3 V VGS = 0 V, IS = 7.5 A (Note 2) 3
Source to Drain Diode Forward Voltage VSD 0.7 1.2 V VGS = 0 V, IS = 2 A (Note 2) 3
Reverse Recovery Time trr 75 120 ns IF = 7.5 A, di/dt = 100 A/μs 3
Reverse Recovery Charge Qrr 109 175 nC 3

CAD (KiCad official)

  • Symbol: FDS86240
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds86240-etched.step / fds86240-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds86240.step / fds86240.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 b737ef493c0a71f2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF