component

FDS8333C-NL-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfds8333c-nl-vbfactory-2.0.0extractor-text

Verified FDS8333C-NL-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FDS8333C-NL-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-nwrumepk/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.12)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fds8333c-nl-vb.kicad_sym✓ fds8333c-nl-vb.kicad_mod✓ fds8333c-nl-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers fds8333c-nl-vb: viewers · Ray 8d ago
fds8333c-nl-vb-etched.glb Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb-etched.step fds8333c-nl-vb: factory component page (tier=lcsc) · Ray 8d ago
fds8333c-nl-vb-hero.glb fds8333c-nl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
fds8333c-nl-vb-hero.overlay.json Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb.glb Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb.kicad_mod Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb.kicad_sym Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb.lbr Publish 0.1.0 · Ray 8d ago
fds8333c-nl-vb.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 8d ago

FDS8333C-NL-VB

VBsemi Elec · MOSFETs · SO-8

FDS8333C-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel per the 30 V / 8 A N-channel ratings), with VGS limited to ±20 V.
2 G1 input Gate of MOSFET 1 (N-channel), rated ±20 V gate-source maximum.
3 S2 passive Source of MOSFET 2 (P-channel, VDS -30 V), with VGS limited to ±20 V.
4 G2 input Gate of MOSFET 2 (P-channel), rated ±20 V gate-source maximum.
5 D2 passive Drain of MOSFET 2 (P-channel), VDS -30 V, ID up to -8 A (package limited); pins 5 and 6 are tied together.
6 D2 passive Drain of MOSFET 2 (P-channel), VDS -30 V, ID up to -8 A (package limited); pins 5 and 6 are tied together.
7 D1 passive Drain of MOSFET 1 (N-channel), VDS 30 V, ID up to 8 A (package limited); pins 7 and 8 are tied together.
8 D1 passive Drain of MOSFET 1 (N-channel), VDS 30 V, ID up to 8 A (package limited); pins 7 and 8 are tied together.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 30 V TA = 25 °C 1
Drain-Source Voltage P-Ch VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V N- and P-Channel 1
Continuous Drain Current N-Ch ID 8 A TJ = 150 °C, TC = 25 °C, package limited 1
Continuous Drain Current P-Ch ID -8 A TJ = 150 °C, TC = 25 °C, package limited 1
Pulsed Drain Current N-Ch IDM 40 A 10 µs pulse width 1
Pulsed Drain Current P-Ch IDM -40 A 10 µs pulse width 1
Source-Drain Diode Current IS 2.6 A TC = 25 °C, N-Channel (P-Channel -2.6) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-Ch RthJA 50 62.5 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance P-Ch RthJA 47 62.5 °C/W t ≤ 10 s 1
Junction-to-Foot (Drain) Thermal Resistance N-Ch RthJF 30 40 °C/W Steady State 1
Junction-to-Foot (Drain) Thermal Resistance P-Ch RthJF 29 38 °C/W Steady State 1
Drain-Source Breakdown Voltage P-Ch VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage N-Ch VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage P-Ch VGS(th) -2 -1 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage N-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-Body Leakage P-Ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current P-Ch IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current N-Ch IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current P-Ch IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current N-Ch ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current P-Ch ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance N-Ch RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.044 Ω VGS = - 8 V, ID = - 6.5 A 2
Drain-Source On-State Resistance P-Ch RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A 2
Forward Transconductance N-Ch gfs 27 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance P-Ch gfs 25 S VDS = - 15 V, ID = - 6.7 A 2
Gate Resistance N-Ch Rg 0.3 1 2.3 Ω f = 1 MHz 2
Gate Resistance P-Ch Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
Body Diode Voltage N-Ch VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage P-Ch VSD -1.2 -0.77 V IS = - 2 A 3
Pulse Diode Forward Current N-Ch ISM 40 A 3

CAD (KiCad official)

  • Symbol: FDS8333C-NL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds8333c-nl-vb-etched.step / fds8333c-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds8333c-nl-vb.step / fds8333c-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 4912b660dfd30993, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF