component
FDS6910-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6910-HXY
HXY MOSFET · MOSFETs · SOP-8
FDS6910-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage rated +20 V max, threshold 1.0 to 2.5 V at 250 µA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage rated +20 V max, threshold 1.0 to 2.5 V at 250 µA. |
| 5 | D2 | passive | Drain of MOSFET 2, connected with pin 6; 30 V VDS rating, 11.5 A continuous drain current at TA=25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, connected with pin 5; 30 V VDS rating, 11.5 A continuous drain current at TA=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, connected with pin 8; 30 V VDS rating, 11.5 A continuous drain current at TA=25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, connected with pin 7; 30 V VDS rating, 11.5 A continuous drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tj=25°C | 1 | |
| Drain Current | ID@TA=25℃ | 11.5 | A | VGS @ 4.5V | 1 | ||
| Drain Current | ID@TA=70℃ | 7.8 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 42 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 10 | 13 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 16 | 22.5 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 11.5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 72 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=18A | 2 | ||
| Input Capacitance | Ciss | 633 | pF | VDS=15V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 120 | pF | VDS=15V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 99 | pF | VDS=15V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 15 | nC | VDS=15V, ID=10A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 4.7 | nC | VDS=15V, ID=10A, VGS=10V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 3.6 | nC | VDS=15V, ID=10A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 5 | ns | VDS=30V, ID=18A, RGEN=3Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 8 | ns | VDS=30V, ID=18A, RGEN=3Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(off) | 21 | ns | VDS=30V, ID=18A, RGEN=3Ω, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 7 | ns | VDS=30V, ID=18A, RGEN=3Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 7 | ns | IF=18A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 5.9 | nC | IF=18A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
FDS6910-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds6910-hxy-etched.step/fds6910-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6910-hxy.step/fds6910-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
68dcbab2ddf99572, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).