FDS6898AZ-NL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source terminal of the first N-channel MOSFET (Q1), whose drain-source voltage is rated 20 V.
2	G1	input	Gate terminal of the first N-channel MOSFET, rated for a gate-source voltage of ±12 V.
3	S2	passive	Source terminal of the second N-channel MOSFET (Q2), whose drain-source voltage is rated 20 V.
4	G2	input	Gate terminal of the second N-channel MOSFET, rated for a gate-source voltage of ±12 V.
5	D2	passive	Drain terminal of the second N-channel MOSFET, rated for a drain-source voltage of 20 V and a pulsed drain current of 44 A.
6	D2	passive	Drain terminal of the second N-channel MOSFET, rated for a drain-source voltage of 20 V and a pulsed drain current of 44 A.
7	D1	passive	Drain terminal of the first N-channel MOSFET, rated for a drain-source voltage of 20 V and a pulsed drain current of 44 A.
8	D1	passive	Drain terminal of the first N-channel MOSFET, rated for a drain-source voltage of 20 V and a pulsed drain current of 44 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS	-12		12	V		1
Continuous Drain Current	ID			10	A	TJ = 150 °C; TC = 25 °C	1
Continuous Drain Current	ID			8.1	A	TA = 25 °C	1
Continuous Drain Current	ID			7.2	A	TA = 70 °C	1
Pulsed Drain Current	IDM			44	A		1
Continuous Source-Drain Diode Current	IS			3.25	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			1.88	A	TA = 25 °C	1
Single Pulse Avalanche Current	IAS			6	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			1.45	mJ		1
Maximum Power Dissipation	PD			2.7	W	TC = 25 °C	1
Maximum Power Dissipation	PD			1.77	W	TC = 70 °C	1
Maximum Power Dissipation	PD			1.78	W	TA = 25 °C	1
Maximum Power Dissipation	PD			1.14	W	TA = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		58	70	°C/W	t ≤ 10 s	1
Maximum Junction-to-Foot (Drain)	RthJF		38	45	°C/W	Steady State	1
Maximum Junction-to-Ambient	RthJA			110	°C/W	Steady State (note d)	1
Drain-Source Breakdown Voltage	VDS	20			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	0.5	1		V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 12 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 20 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 20 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	10			A	VDS ≥ 5 V, VGS = 4.5 V	2
Drain-Source On-State Resistance	RDS(on)			0.009	Ω	VGS = 4.5 V, ID = 5 A	2
Drain-Source On-State Resistance	RDS(on)			0.012	Ω	VGS = 2.5 V, ID = 4 A	2
Gate Resistance	Rg	0.8	4.3	8.6	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		12	24	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		55	100	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		11	22	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		8	16	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		9	18	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		10	20	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		6	12	ns	VDD = 10 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 2 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		11	20	ns	IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: FDS6898AZ-NL-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: fds6898az-nl-vb-etched.step / fds6898az-nl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6898az-nl-vb.step / fds6898az-nl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 f8d59ee2b2565358, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

FDS6898AZ-NL-VB

Verified FDS6898AZ-NL-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README