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Contents

README

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FDS6892A-HXY

HXY MOSFET · MOSFETs · SOP-8

FDS6892A-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of N-channel MOSFET 1; the device absolute maximum ratings apply, with VDS 20V and VGS ±12V.
2 G1 input Gate terminal of N-channel MOSFET 1; the absolute maximum gate-source voltage is ±12V.
3 S2 passive Source terminal of N-channel MOSFET 2; the device absolute maximum ratings apply, with VDS 20V and VGS ±12V.
4 G2 input Gate terminal of N-channel MOSFET 2; the absolute maximum gate-source voltage is ±12V.
5 D2 passive Drain terminal of N-channel MOSFET 2; the absolute maximum drain-source voltage is 20V and continuous drain current is 8A.
6 D2 passive Drain terminal of N-channel MOSFET 2; the absolute maximum drain-source voltage is 20V and continuous drain current is 8A.
7 D1 passive Drain terminal of N-channel MOSFET 1; the absolute maximum drain-source voltage is 20V and continuous drain current is 8A.
8 D1 passive Drain terminal of N-channel MOSFET 1; the absolute maximum drain-source voltage is 20V and continuous drain current is 8A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA 2
Gate Leakage Current IGSS -100 100 nA VGS = ±12V, VDS = 0V; printed as ±100 in Max column 2
Drain Cut-off Current IDSS 1 µA VDS = 20V, VGS = 0V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1 V VGS = VDS, ID = 250µA 2
Drain-Source On-State Resistance RDS(on) 13 20 mΩ VGS = 4.5V, ID = 5A 2
Drain-Source On-State Resistance RDS(on) 18 30 mΩ VGS = 2.5V, ID = 4.7A 2
Drain-Source On-State Resistance RDS(on) 28 57 mΩ VGS = 1.8V, ID = 4.3A 2
Body Diode Voltage VSD 1.2 V IS = 4A, VGS = 0V 2
Continuous Source Current IS 8 A 2
Drain-Source Voltage VDS 20 V TC = 25℃ unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V Printed as ±12 V 1
Drain Current-Continuous ID 8 A TC = 25℃ unless otherwise noted 1
Pulsed Drain Current IDM 28 A 1
Maximum Power Dissipation PD 2.25 W TC = 25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 80 ℃/W Note 2: surface mounted on 1 inch² FR-4 board with 2OZ copper 1

CAD (KiCad official)

  • Symbol: FDS6892A-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds6892a-hxy-etched.step / fds6892a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6892a-hxy.step / fds6892a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 45470038fc3ca64f, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF