component
FDS6890A
Public Made by Adomby adom
onsemi MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS6890A
onsemi · MOSFETs · SOIC-8
FDS6890A from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is limited to ±8 V (VGSS). |
| 3 | S2 | passive | Source terminal of MOSFET 2; the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is limited to ±8 V (VGSS). |
| 5 | D2 | passive | Drain terminal of MOSFET 2; the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second drain pin); the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
| 8 | D1 | passive | Drain terminal of MOSFET 1 (second drain pin); the device is rated for 20 V drain-source voltage (VDSS) and 7.5 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Drain Current - Continuous | ID | 7.5 | A | Note 1a | 2 | ||
| Drain Current - Pulsed | ID | 20 | A | Pulsed | 2 | ||
| Power Dissipation for Dual Operation | PD | 2 | W | Dual operation | 2 | ||
| Power Dissipation for Single Operation | PD | 1.6 | W | Single operation, Note 1a | 2 | ||
| Power Dissipation for Single Operation | PD | 1 | W | Single operation, Note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 0.9 | W | Single operation, Note 1c | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 78 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 40 | °C/W | Note 1 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0 V, ID = 250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 16 V, VGS = 0 V | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 8 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -8 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 0.013 | 0.018 | Ω | VGS = 4.5 V, ID = 7.5 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.021 | 0.034 | Ω | VGS = 4.5 V, ID = 7.5 A, TJ = 125°C | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.016 | 0.022 | Ω | VGS = 2.5 V, ID = 6.5 A | 3 | |
| On-State Drain Current | ID(on) | 20 | A | VGS = 10 V, VDS = 5 V | 3 | ||
| Forward Transconductance | gFS | 35 | S | VDS = 5 V, ID = 7.5 A | 3 | ||
| Turn-On Delay Time | td(on) | 13 | 24 | ns | VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | 3 | |
| Turn-On Rise Time | tr | 26 | 42 | ns | VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 65 | 90 | ns | VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | 3 | |
| Turn-Off Fall Time | tf | 23 | 37 | ns | VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge | Qg | 23 | 32 | nC | VDS = 10 V, ID = 7.5 A, VGS = 4.5 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 1.3 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.65 | 1.2 | V | VGS = 0 V, IS = 1.3 A (Note 2) | 3 |
CAD (KiCad official)
- Symbol:
FDS6890A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
fds6890a-etched.step/fds6890a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds6890a.step/fds6890a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
0b85139ab2818fd3, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).